Zobrazeno 1 - 10
of 500
pro vyhledávání: '"Fitzgerald, Eugene A."'
The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into SiO₂ etch mask by reactive io
Externí odkaz:
http://hdl.handle.net/1721.1/29821
InN has been grown on GaN with a thin intermediate layer of InGaN by metalorganic chemical vapor deposition (MOCVD) to further enhance indium incorporation in subsequent InGaN layer. Trimethylindium (TMI) and ammonia (NH₃) were used as the source f
Externí odkaz:
http://hdl.handle.net/1721.1/29819
Autor:
Chew, Han Guan, Choi, Wee Kiong, Foo, Y.L., Chim, Wai Kin, Fitzgerald, Eugene A., Zheng, F., Samanta, S.K., Voon, Z.J., Seow, K.C.
Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO₂) system have been studied based on the Ge content of co-sputtered Ge-SiO₂ films using transmission electron microscopy (TEM) and X-ray photoelectron spectrosc
Externí odkaz:
http://hdl.handle.net/1721.1/29824
We report on the characteristics of a ZnO based metal insulator semiconductor (MIS) diode comprised of a heterostructure of n-ZnO nanorods/n-GaN. The MIS structure consisted of unintentional - doped n type ZnO nanorods grown on n-GaN sample using hyd
Externí odkaz:
http://hdl.handle.net/1721.1/29820
The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InG
Externí odkaz:
http://hdl.handle.net/1721.1/7367
Autor:
Isaacson, David M., Taraschi, G., Pitera, Arthur J., Ariel, Nava, Fitzgerald, Eugene A., Langdo, Thomas A.
We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer a
Externí odkaz:
http://hdl.handle.net/1721.1/7373
The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures o
Externí odkaz:
http://hdl.handle.net/1721.1/7370
Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully sil
Externí odkaz:
http://hdl.handle.net/1721.1/7371
Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning elect
Externí odkaz:
http://hdl.handle.net/1721.1/7368
Autor:
Quang, Hong Le, Chua, Soo-Jin, Loh, Kian Ping, Chen, Zhen, Thompson, Carl V., Fitzgerald, Eugene A.
Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are contr
Externí odkaz:
http://hdl.handle.net/1721.1/7360