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Autor:
Han Wui Then, Pratik Koirala, Marko Radosavljevic, Fischer Paul B, Tushar Talukdar, B. Krist, Kimin Jun, Nicole K. Thomas
Publikováno v:
IEEE Transactions on Electron Devices. 67:5306-5314
We demonstrate industry’s first 300 mm GaN transistor technology and 3-D monolithic heterogeneous integration with Si transistors, enabled by 300 mm GaN metal–organic chemical vapor deposition (MOCVD) epitaxy and 300 mm 3-D layer transfer. The 30
Publikováno v:
IEEE Transactions on Power Electronics. 35:6208-6220
Intel's microprocessors are powered by high-frequency fully-integrated switching regulators implemented on die. Current products use non-magnetic inductors designed in the package substrate. This article investigates the use of magnetic thin film ind
Autor:
Shimin Huang, Lei Li, Alyosha Molnar, Debdeep Jena, Huili Grace Xing, Marko Radosavljevic, Fischer Paul B, Han Wui Then, Reet Chaudhuri, James C. M. Hwang, Samuel James Bader, Hyunjea Lee, Austin Hickman, Takuya Maeda, Kazuki Nomoto
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
A strong need exists for a wide-bandgap p-type transistor counterpart of the n-channel GaN HEMTs for power electronics and novel RF circuits. In this work, the first p-channel nitride transistors that break the GHz speed barrier are demonstrated. By
Autor:
Mario Weiss, Roza Kotlyar, Heli Vora, M. Qayyum, Han Wui Then, V. Hadagali, T. Talukdar, X. Weng, Nachiket Desai, Rode Johann Christian, N. Minutillo, Kimin Jun, Marko Radosavljevic, A. A. Oni, R. Ehlert, J. Sandford, Nicole K. Thomas, Pratik Koirala, P. Wallace, Fischer Paul B
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We discuss advances in our research on 300mm GaN NMOS by demonstrating GaN-on-Si(111) NMOS transistors achieving low R ON =330Ω-μm; high ID,max=1.7mA/μm; BV DS (at I D =1μA/μm) of up to 90V with excellent R ON =660Ω-μm; record f T /f MAX of 20
Autor:
Ibrahim Ban, Robert L. Bristol, Han Wui Then, Pratik Koirala, Tronic Tristan A, Kimin Jun, Rajat Kanti Paul, Nicole K. Thomas, Chouksey Siddharth, Hafez Walid M, D. Staines, W. Rachmady, P. Agababov, Fischer Paul B, T. Talukdar, Kevin Lin, T. Michaelos, Huang Cheng-Ying, Brandon Holybee, B. Krist, Marko Radosavljevic, Manish Chandhok, J. Peck
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We expand on our work in [1] by demonstrating both Si P- and NMOS finfet transistors monolithically integrated with GaN transistors on 300mm Si(111) wafers using 3D integration. With the Si finfet architecture, we are able to take advantage of the fi
Autor:
W. Rachmady, Ashish Agrawal, Huang Cheng-Ying, B. Krist, Matthew V. Metz, Chouksey Siddharth, Jack Portland Kavalieros, A. A. Oni, Jessica M. Torres, Kimin Jun, Rajat Kanti Paul, Seung Hoon Sung, Hui Jae Yoo, T. Talukdar, G. Elbaz, Wong Lawrence D, Mueller Brennen, Robert B. Turkot, Fischer Paul B, P. Sears, Benjamin Chu-Kung, G. Dewey, Phan Anh, T. Michaelos
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We report a short channel high performance Ge PMOS integrated with Si NMOS in sequential monolithic 3D stacking. A layer transfer Ge PMOS with record I ON = 497 μA/μm at I OFF = 8nA/μm and I ON = 630 μA/μm at I OFF = 100nA/μm and V DS = -0.5V i
Autor:
Sansaptak Dasgupta, Robert L. Bristol, D. Staines, Kimin Jun, Fischer Paul B, J. Peck, Rajat Kanti Paul, Hafez Walid M, Nicole K. Thomas, Ibrahim Ban, Huang Cheng-Ying, Mueller Brennen, W. Rachmady, T. Michaelos, Kevin Lin, Marko Radosavljevic, Chouksey Siddharth, Manish Chandhok, Nidhi Nidhi, Tronic Tristan A, B. Krist, Han Wui Then, P. Agababov, Brandon Holybee, T. Talukdar
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We have demonstrated industry’s first 300mm 3D heterogeneous integration of high performance, low-leakage high-K dielectric metal gate enhancement-mode (e-mode) GaN NMOS and Si PMOS transistors on 300mm high-resistivity (HR) Si(111) substrate, enab
Autor:
Seung Hoon Sung, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Han Wui Then, Fischer Paul B
Publikováno v:
DRC
Due to its high Baliga and Johnson FoMs [1], [2] (Table I), GaN is a promising material for high-voltage power and high frequency, high-power RF applications [3]–[6]. Epitaxial integration of GaN on foreign substrates such as SiC [7]–[14], [30]
Autor:
Marko Radosavljevic, G. Yang, Sanaz K. Gardner, Sansaptak Dasgupta, Fischer Paul B, Seung Hoon Sung, Loren Chow, Valluri R. Rao, Han Wui Then
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
The characteristics of high-k gate dielectric depletion-mode and enhancement-mode GaN MOS-HEMTs is reviewed. High-k gate dielectric depletion-mode GaN MOS-HEMT with thin AlInN polarization layer of 2.5nm in the gate stack is shown to exhibit "negativ