Zobrazeno 1 - 10
of 1 255
pro vyhledávání: '"Fiori G."'
Autor:
Casiraghi, C., Macucci, M., Parvez, K., Worsley, R., Shin, Y., Bronte, F., Borri, C., Paggi, M., Fiori, G.
Publikováno v:
Carbon, 2017
We present an investigation of inkjet printed strain gauges based on two-dimensional (2D) materials. The technology leverages water-based and biocompatible inks to fabricate strain measurement devices on flexible substrates such as paper. We demonstr
Externí odkaz:
http://arxiv.org/abs/1708.09829
Autor:
McManus, D., Vranic, S., Withers, F., Sanchez-Romaguera, V., Macucci, M., Yang, H., Sorrentino, R., Parvez, K., Son, S., Iannaccone, G., Kostarelos, K., Fiori, G., Casiraghi, C.
Publikováno v:
Nature Nanotechnology 12, 343 (2017)
Fully exploiting the properties of 2D crystals requires a mass production method able to produce heterostructures of arbitrary complexity on any substrate, including plastic. Solution processing of graphene allows simple and low-cost techniques such
Externí odkaz:
http://arxiv.org/abs/1705.00936
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Phys. Rev. B 82, 161413(R) (2010)
We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schr\"odinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electr
Externí odkaz:
http://arxiv.org/abs/1010.4393
Publikováno v:
Phys. Rev. B 81, 085427 (2010)
We present a systematic study of electron backscattering phenomena during conduction for graphene nanoribbons with single-vacancy scatterers and dimensions within the capabilities of modern lithographic techniques. Our analysis builds upon an \textit
Externí odkaz:
http://arxiv.org/abs/1002.0949
Autor:
Fiori, G., Iannaccone, G.
In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage, without the
Externí odkaz:
http://arxiv.org/abs/0906.1254
Autor:
Fiori, G., Iannaccone, G.
Publikováno v:
IEEE Electron Device Letters, Vol. 30, pp. 261-264, 2009.
We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via independent gate operation. We evaluate device behavior using atomistic
Externí odkaz:
http://arxiv.org/abs/0810.0128
Autor:
Fiori, G., Iannaccone, G.
Publikováno v:
IEEE Electron Device Letters, Vol. 28, Issue 8, pp. 760 - 762, 2007
We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the non-equilibriu
Externí odkaz:
http://arxiv.org/abs/0704.1875
In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution of the 3D
Externí odkaz:
http://arxiv.org/abs/cond-mat/0512275
Publikováno v:
In Solid State Electronics May 2018 143:2-9
