Zobrazeno 1 - 10
of 1 524
pro vyhledávání: '"FinFETs"'
Autor:
Qamar-Ud-Din Memon, Saif Ur Rehman, Muhammad Adil Bashir, Noor Muhammad Memon, Mohd Anul Haq, Sultan Alharby, Ahmed Alhussen, Ateeq Ur Rehman
Publikováno v:
IEEE Access, Vol 12, Pp 14238-14247 (2024)
This paper discusses the alternating-current (AC) and direct-current (DC) characteristics of Trigate FinFETs. A modified non linear DC model is proposed to predict $I-V$ characteristics with effect of an efficient technique for the extraction of AC s
Externí odkaz:
https://doaj.org/article/22c221870317442b87ee9a0d67582582
Autor:
Arsen Ahmed, Hüseyin Demirel
Publikováno v:
Iranian Journal of Electrical and Electronic Engineering, Vol 19, Iss 4, Pp 117-123 (2023)
In the past twenty years, low-voltage and power design have gained attention in analog VLSI design, particularly for high-performance and portable integrated circuits (ICs). Because of the increasing density of large-scale integration, a single silic
Externí odkaz:
https://doaj.org/article/f10997454548452ebe05ddbf1afd5000
Publikováno v:
Micromachines, Vol 15, Iss 10, p 1187 (2024)
The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk CMOS, exhibit favorable electrostatic characteristics and offer power/perf
Externí odkaz:
https://doaj.org/article/43ba645be2454ab1b6a2b24278f32255
Publikováno v:
IEEE Access, Vol 11, Pp 131191-131204 (2023)
In this paper, composite models are developed to predict the statistics of the optimal number and size of repeaters required to minimize the power delay product (PDP) of on-chip hybrid copper-graphene interconnects when subject to parametric uncertai
Externí odkaz:
https://doaj.org/article/2481b01929a84fc59502fe0cb1c36570
Akademický článek
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Autor:
Yi-Chuen Eng, Luke Hu, Tzu-Feng Chang, Chih-Yi Wang, Steven Hsu, Osbert Cheng, Chien-Ting Lin, Yu-Shiang Lin, Zen-Jay Tsai, Chih-Wei Yang, Jim Lu, Steve Yi-Wen Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 281-288 (2022)
The short–channel behaviors of n–channel (electron–conducting) fin field–effect transistors (n–FinFETs) set at different threshold voltages were analyzed at different power supply voltages. Interesting observations were made by considering
Externí odkaz:
https://doaj.org/article/6a435b103bed47d28f4652cc1ebc4c31
Publikováno v:
Informacije MIDEM, Vol 51, Iss 4, Pp 253-259 (2021)
Externí odkaz:
https://doaj.org/article/5157f6d6a859471691c004533be51fbc
Autor:
Jena, Debdeep, author
Publikováno v:
Quantum Physics of Semiconductor Materials and Devices, 2022, ill.
Externí odkaz:
https://doi.org/10.1093/oso/9780198856849.003.0019
Autor:
Hao Chang, Guilei Wang, Hong Yang, Qianqian Liu, Longda Zhou, Zhigang Ji, Ruixi Yu, Zhenhua Wu, Huaxiang Yin, Anyan Du, Junfeng Li, Jun Luo, Chao Zhao, Wenwu Wang
Publikováno v:
Nanomaterials, Vol 13, Iss 7, p 1259 (2023)
In this article, an experimental study on the gate-induced drain leakage (GIDL) current repairing worst hot carrier degradation (HCD) in Si p-FinFETs is investigated with the aid of an ultra-fast measurement (UFM) technique (~30 μs). It is found tha
Externí odkaz:
https://doaj.org/article/b738372e6e30405ca4bce8bc40f807b5
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 2, Pp 72-77 (2021)
High-k metal gate technology improves the performance and reduces the gate leakage current of metal–oxide–semiconductor field-effect transistors (MOSFETs). This study investigated four different work function metal (WFM) stacks in the gate of fin
Externí odkaz:
https://doaj.org/article/1891743a4eaa498f96f6e993d8118506