Zobrazeno 1 - 10
of 120
pro vyhledávání: '"Filippo Nava"'
Autor:
Daniele Boso, Martina Tognon, Matteo Curtarello, Sonia Minuzzo, Ilaria Piga, Valentina Brillo, Elisabetta Lazzarini, Jessica Carlet, Ludovica Marra, Chiara Trento, Andrea Rasola, Ionica Masgras, Leonardo Caporali, Fabio Del Ben, Giulia Brisotto, Matteo Turetta, Roberta Pastorelli, Laura Brunelli, Filippo Navaglia, Giovanni Esposito, Angela Grassi, Stefano Indraccolo
Publikováno v:
Journal of Experimental & Clinical Cancer Research, Vol 42, Iss 1, Pp 1-19 (2023)
Abstract Background Genetic and metabolic heterogeneity are well-known features of cancer and tumors can be viewed as an evolving mix of subclonal populations, subjected to selection driven by microenvironmental pressures or drug treatment. In previo
Externí odkaz:
https://doaj.org/article/291e0ae6448e4b3eb631add9fd1a77cb
Silicon Carbide for High Signal to Noise Ratio MIPs Detection From Room Temperature to 80$^{\circ}$C
Publikováno v:
IEEE Transactions on Nuclear Science. 56:2538-2542
The relatively low value of the number of electron-hole (e-h) pairs per micron for Minimum Ionizing Particles (MIPs) in SiC against the value for Si, imposes severe constrains on the crystallographic quality, the thickness and the doping concentratio
Autor:
Daniela Basso, Ada Aita, Filippo Navaglia, Paola Mason, Stefania Moz, Alessio Pinato, Barbara Melloni, Luca Iannelli, Andrea Padoan, Chiara Cosma, Angelo Moretto, Alberto Scuttari, Daniela Mapelli, Rosario Rizzuto, Mario Plebani
Publikováno v:
BMC Medicine, Vol 20, Iss 1, Pp 1-12 (2022)
Abstract Background The active surveillance of students is proposed as an effective strategy to contain SARS-CoV-2 spread and prevent schools’ closure. Saliva for molecular testing is as sensitive as naso-pharyngeal swab (NPS), self-collected and w
Externí odkaz:
https://doaj.org/article/d202d1d7f0f34b5e9b23fdd3200c7043
Autor:
Fred Hartjes, Claudio Lanzieri, M. Brianzi, P. Vanni, Silvio Sciortino, Stefano Lagomarsino, Vladimir Cindro, Michael Moll, Filippo Nava
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 552:138-145
In this work we report electrical characterizations on heavily irradiated epitaxial 4H-SiC Schottky diodes. Even after an irradiation at a fluence of 1:4 � 10 16 p=cm 2 and 7 � 10 15 n=cm 2 , we found the diodes still able to detect a and b parti
Publikováno v:
Materials Science Forum. :359-364
The effects of irradiation with protons and electrons on 4H-silicon carbide epilayers were investigated. The particle energy was 6.5 and 8.2 MeV. The electronic levels associated with the irradiation-induced defects were analyzed by current-voltage c
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 522:413-419
This work presents experimental results on the possibility of high resolution X-ray spectroscopy in a wide temperature range, from room temperature up to 100°C without any cooling system, using Silicon Carbide (SiC) detectors. This capability arises
Autor:
Mara Bruzzi, Claudio Lanzieri, Silvio Sciortino, P. Vanni, Filippo Nava, Stefano Lagomarsino, Günter Wagner
Publikováno v:
IEEE Transactions on Nuclear Science. 51:238-244
The relatively high value of the energy required to produce an electron-hole pair in silicon carbide, SiC, by a minimum ionizing particle (MIP) against the value for Si, imposes severe constrains in the crystallographic quality, the thickness and the
Autor:
Silvio Sciortino, Mara Bruzzi, E. Borchi, Marta Bucciolini, S. Pini, S. Miglio, Filippo Nava, David Menichelli, Stefano Lagomarsino
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 514:135-140
We present a comparison between the performance of on-line radiotherapy dosimeters made with different high-bandgap semiconductor materials. We analysed the performances of a Schottky diode made with an epitaxial n-type 4H–SiC and a Chemical Vapour
Publikováno v:
Materials science forum 433-4 (2003): 439–442.
info:cnr-pdr/source/autori:A. Castaldini, A. Cavallini, F. Nava, P.G. Fuochi, P. Vanni/titolo:Electron-induced damage effects in 4H-SiC Schottky diodes/doi:/rivista:Materials science forum/anno:2003/pagina_da:439/pagina_a:442/intervallo_pagine:439–442/volume:433-4
info:cnr-pdr/source/autori:A. Castaldini, A. Cavallini, F. Nava, P.G. Fuochi, P. Vanni/titolo:Electron-induced damage effects in 4H-SiC Schottky diodes/doi:/rivista:Materials science forum/anno:2003/pagina_da:439/pagina_a:442/intervallo_pagine:439–442/volume:433-4
Deep level transient spectroscopy(DLTS) and capacitance-voltage (C-V) characteristics were used to investigate the effects induced by electron irradiation on the majority carrier traps in Schottky diodes prepared on 4H silicon Carbide (SiC) epilayers
Autor:
Pg Fuochi, Giovanni Verzellesi, P. Vanni, Claudio Lanzieri, Filippo Nava, Ettore Vittone, Maurice Glaser
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 505:645-655
Particle detectors were made using semiconductor epitaxial 4H–SiC as the detection medium. The investigated detectors are formed by Schottky contact (Au) on the epitaxial layer and an ohmic contact on the back side of 4H–SiC substrates with diffe