Zobrazeno 1 - 10
of 171
pro vyhledávání: '"Filippo, Giubileo"'
Autor:
Aniello Pelella, Kimberly Intonti, Ofelia Durante, Arun Kumar, Loredana Viscardi, Sebastiano De Stefano, Paola Romano, Filippo Giubileo, Hazel Neill, Vilas Patil, Lida Ansari, Brendan Roycroft, Paul K. Hurley, Farzan Gity, Antonio Di Bartolomeo
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-10 (2024)
Abstract Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temper
Externí odkaz:
https://doaj.org/article/4060848b7bd24da094f7067d45036944
Autor:
Arun Kumar, Aniello Pelella, Kimberly Intonti, Loredana Viscardi, Ofelia Durante, Filippo Giubileo, Paola Romano, Hazel Neill, Vilas Patil, Lida Ansari, Paul K. Hurley, Farzan Gity, Antonio Di Bartolomeo
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 8, Pp n/a-n/a (2024)
Abstract The family of 2D chalcogenide semiconductors has been growing rapidly. Metal monochalcogenides, for instance, can enable new possibilities in functional electronics and optoelectronics. A Gallium Selenide (GaSe) thin flake is used to fabrica
Externí odkaz:
https://doaj.org/article/296d6fa24d304c349bf3e3a969aa0cbd
Autor:
Filippo Giubileo
Publikováno v:
Nanomaterials, Vol 14, Iss 21, p 1771 (2024)
This Special Issue on “Current Advances in Nanoelectronics, Nanosensors, and Devices” collects cutting-edge research and comprehensive reviews in the rapidly evolving field of nanotechnology. This collection aims to highlight key breakthroughs in
Externí odkaz:
https://doaj.org/article/b6ac8aa8fd0c441aaf2bc4f4c336d5fd
Publikováno v:
Nanomaterials, Vol 14, Iss 21, p 1740 (2024)
The family of BiS2-based superconductors has attracted considerable attention since their discovery in 2012 due to the unique structural and electronic properties of these materials. Several experimental and theoretical studies have been performed to
Externí odkaz:
https://doaj.org/article/d7eaebb38cd04705aaac49a41627ac31
Autor:
Kimberly Intonti, Enver Faella, Loredana Viscardi, Arun Kumar, Ofelia Durante, Filippo Giubileo, Maurizio Passacantando, Hoi Tung Lam, Konstantinos Anastasiou, Monica F. Craciun, Saverio Russo, Antonio Di Bartolomeo
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 8, Pp n/a-n/a (2023)
Abstract This study reports the optoelectronic characterization of few‐layer ReSe2field effect transistors at different pressures. The output curves reveal dominant n‐type behavior and a low Schottky barrier at the metal contacts. The transfer cu
Externí odkaz:
https://doaj.org/article/913d673a8c804bcbae39b6440067f8e9
Autor:
Valeria Demontis, Domenic Prete, Enver Faella, Filippo Giubileo, Valentina Zannier, Ofelia Durante, Lucia Sorba, Antonio Di Bartolomeo, Francesco Rossella
Publikováno v:
Nano Express, Vol 5, Iss 3, p 035007 (2024)
Iontronics exploits mobile ions within electrolytes to control the electronic properties of materials and devices' electrical and optical response. In this frame, ionic liquids are widely exploited for the gating of semiconducting nanostructure devic
Externí odkaz:
https://doaj.org/article/bae4ff39701f45539af6e52f0d5eab41
Autor:
Filippo Giubileo, Daniele Capista, Enver Faella, Aniello Pelella, Woo Young Kim, Paola Benassi, Maurizio Passacantando, Antonio Di Bartolomeo
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 1, Pp n/a-n/a (2023)
Abstract An experimental study about field emission properties of commercially available graphene flowers cloth is reported. Material characterization by means of X‐ray diffraction, Raman spectroscopy, and X‐ray photoemission spectroscopy confirm
Externí odkaz:
https://doaj.org/article/1fbbc4c515f843cb81fa60898cc39541
Autor:
Aniello Pelella, Daniele Capista, Maurizio Passacantando, Enver Faella, Alessandro Grillo, Filippo Giubileo, Nadia Martucciello, Antonio Di Bartolomeo
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 1, Pp n/a-n/a (2023)
Abstract A photodetector with bias‐tuneable current is realized by adding a film of single‐walled carbon nanotubes (CNT), forming a CNT/Si3N4/Si capacitor, to a prefabricated Pt–Ti/Si3N4/Si metal–insulator–semiconductor (MIS) diode. Electri
Externí odkaz:
https://doaj.org/article/2f437b4d21324e1ca0200c5f372faef2
Autor:
Daniele Capista, Luca Lozzi, Aniello Pelella, Antonio Di Bartolomeo, Filippo Giubileo, Maurizio Passacantando
Publikováno v:
Nanomaterials, Vol 13, Iss 4, p 650 (2023)
Photodetectors based on vertical multi-walled carbon nanotube (MWCNT) film-Si heterojunctions are realized by growing MWCNTs on n-type Si substrates with a top surface covered by Si3N4 layers. Spatially resolved photocurrent measurements reveal that
Externí odkaz:
https://doaj.org/article/13d629dfe3bb40699366de5a3a360978
Autor:
Daniele Capista, Luca Lozzi, Antonio Di Bartolomeo, Filippo Giubileo, Nadia Martucciello, Maurizio Passacantando
Publikováno v:
Nano Express, Vol 5, Iss 1, p 015004 (2023)
New works on Carbon Nanotubes-Silicon MIS heterostructures showed that the presence of thickness inhomogeneities in the insulating layer across the device can be exploited to increase their functionalities. In this work, we report the fabrication and
Externí odkaz:
https://doaj.org/article/e54b5d08350b401dbc7b07d8d5b10460