Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Filip Kudrna"'
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The paper summarizes layout considerations as well as experimental data of low voltage (50 V) trench MOSFET with integrated current sensor. Major effects responsible for errors of the sensed current as well as its current dependency are discussed. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1244d0d1588e6bef089432fd785e9219
https://doi.org/10.23919/ispsd50666.2021.9452309
https://doi.org/10.23919/ispsd50666.2021.9452309
Autor:
Santosh Menon, B. Greenwood, Jifa Hao, Filip Kudrna, M. Thomason, Ladislav Seliga, Aakash Arora, Roman Malousek, Matej Blaho, B. Williams, Ihsiu Ho, Radim Spetik, Shuji Fujiwara
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
the paper summarizes both analytical and numerical considerations as well as experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) and self-clamped (SCIS) inductive switching applications. The herein presented data summarize failur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33836997e9c8fc88e33d7b6eda0fed2f
https://doi.org/10.1109/ispsd46842.2020.9170095
https://doi.org/10.1109/ispsd46842.2020.9170095
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
In this paper, a novel method for creation of Partial Silicon on Insulator (PSOI) substrate is divulged. The PSOI substrate may be thereafter utilized as a starting material for power integrated technologies where both dielectrically isolated devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb5309515d615395ce25cdd841bd66f4
https://doi.org/10.23919/ispsd.2017.7988950
https://doi.org/10.23919/ispsd.2017.7988950