Zobrazeno 1 - 10 of 17 pro vyhledávání: '"Filip Geenen"'
2
Formation and preferential orientation of Au-free Al/Ti-based ohmic contacts on different hexagonal nitride-based heterostructures
Autor: Davy Deduytsche, P. Coppens, Eduardo Solano, Cristian Mocuta, Christophe Detavernier, Filip Geenen, A. Constant
Publikováno v: JOURNAL OF APPLIED PHYSICS
Journal of Applied Physics
Wide-bandgap nitride semiconductors are currently in development for high-power electronic applications. Compositional layered heterostructures of such nitrides result in a high polarization field at the interface, enabling a higher electron mobility
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::701d70bb5ac1804c40641bf1cc4ae397
https://hdl.handle.net/1854/LU-8699187
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3
Setting Carriers Free: Healing Faulty Interfaces Promotes Delocalization and Transport in Nanocrystal Solids
Autor: Andrej Singer, Athmane Tadjine, Patrick Peiwen Ding, Jacob Ruff, Zeger Hens, Christophe Detavernier, Gunther Roelkens, Nayyera Mahmoud, Willem Walravens, Christophe Delerue, Jolien Dendooven, O. Gorobtsov, Eduardo Solano, Filip Geenen
Publikováno v: ACS Nano
ACS Nano, American Chemical Society, 2019, 13 (11), pp.12774-12786. ⟨10.1021/acsnano.9b04757⟩
ACS Nano, 2019, 13 (11), pp.12774-12786. ⟨10.1021/acsnano.9b04757⟩
International audience; Superlattices of epitaxially connected nanocrystals (NCs) are model systems to study electronic and optical properties of NC arrays. Using elemental analysis and structural analysis by in situ X-ray fluorescence and grazing-in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2489013dc6d8beb887abbab6681e8c8
https://hal.archives-ouvertes.fr/hal-02517025
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4
Impurity-enhanced solid-state amorphization : the Ni-Si thin film reaction altered by nitrogen
Autor: Jelle Demeulemeester, N. M. Santos, K. van Stiphout, V. Joly, Christophe Detavernier, Kristiaan Temst, S. M. C. Miranda, Filip Geenen, L. M. C. Pereira, André Vantomme, Felipe Kremer
Publikováno v: JOURNAL OF PHYSICS D-APPLIED PHYSICS
© 2019 IOP Publishing Ltd. Solid-state amorphization, the growth of an amorphous phase during annealing, has been studied in a wide variety of thin film structures. Whereas research on the remarkable growth of such a metastable phase has mostly focu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f8004b6df4978284ac4508013eb40da
https://biblio.ugent.be/publication/8598733
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5
Ion beam modification of the Ni-Si solid-phase reaction: The influence of substrate damage and nitrogen impurities introduced by ion implantation
Autor: C.M. Comrie, Cristian Mocuta, Kristiaan Temst, N. M. Santos, K. van Stiphout, Jelle Demeulemeester, V. Joly, Christophe Detavernier, S. M. C. Miranda, André Vantomme, L. M. C. Pereira, Filip Geenen
Publikováno v: Journal of Physics D: Applied Physics. 54:015307
We report on the growth of thin NiSi films via the thermal reaction of Ni layers (13–35 nm) with Si(100) substrates modified by ion implantation. By introducing substrate damage or nitrogen impurities prior to the solid-phase reaction, several prop
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39d2b6531dfe951f03eeab6cfa12c944
https://doi.org/10.1088/1361-6463/abb046
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6
Controlling the formation and stability of ultra-thin nickel silicides : an alloying strategy for preventing agglomeration
Autor: K. van Stiphout, Sara Bals, Christian Lavoie, A Nanakoudis, Christophe Detavernier, Filip Geenen, André Vantomme, Jean Jordan-Sweet
Publikováno v: JOURNAL OF APPLIED PHYSICS
Journal of applied physics
© 2018 Author(s). The electrical contact of the source and drain regions in state-of-the-art CMOS transistors is nowadays facilitated through NiSi, which is often alloyed with Pt in order to avoid morphological agglomeration of the silicide film. Ho
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4c58fe2f74982d4354b39e0f6972085
https://hdl.handle.net/1854/LU-8590890
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7
Axiotaxy and epitaxial textures in C54-TiSi2 films on Si(001) and Si(111) substrates
Autor: Christophe Detavernier, Christian Lavoie, Filip Geenen, Jean Jordan-Sweet
Publikováno v: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Titanium silicide can be used in micro-electronic applications to reduce the contact resistance for silicon-based transistors. This paper gives an overview of the preferred orientation between the Ti-silicide films and Si(0 0 1) and Si(1 1 1)-oriente
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9a7aa6b5fe342e179afa29f174ce451
https://biblio.ugent.be/publication/8590887
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8
The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture
Autor: Christian Lavoie, Eduardo Solano, Cristian Mocuta, Christophe Detavernier, Jean Jordan-Sweet, Filip Geenen
Publikováno v: JOURNAL OF APPLIED PHYSICS
The controlled formation of silicide materials is an ongoing challenge to facilitate the electrical contact of Si-based transistors. Due to the ongoing miniaturisation of the transistor, the silicide is trending to ever-thinner thickness's. The corre
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9eef84d7cac18b8e8bd80745444bfec7
https://biblio.ugent.be/publication/8590888/file/8590895
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9
Axiotaxy in oxide heterostructures: Preferential orientation of BaCeO3 nanoparticles embedded in superconducting YBa2Cu3O7 −δ thin films
Autor: Eduardo Solano, Xavier Obradors, Teresa Puig, Christophe Detavernier, Filip Geenen, Cristian Mocuta
Publikováno v: Digital.CSIC. Repositorio Institucional del CSIC
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Addressing and controlling texture in crystalline materials is an extremely important issue, since this can largely influence and finally control the materials properties, be it mechanical, electrical, magnetic, etc. In this work, we present an axiot
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd530a6879f758ebbe94570915d8472f
http://hdl.handle.net/10261/158252
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10
Formation and texture of palladium germanides studied by in situ X-ray diffraction and pole figure measurements
Autor: Karl Opsomer, Werner Knaepen, Jean Jordan-Sweet, Christian Lavoie, Roland Vanmeirhaeghe, Christophe Detavernier, K. De Keyser, Filip Geenen
Publikováno v: Thin Solid Films. 551:86-91
The solid state reaction between 30 nm Pd films and various Ge substrates (Ge(100), Ge(111), polycrystalline Ge and amorphous Ge) was studied by means of in situ X-ray diffraction and in situ sheet resistance measurements. The reported phase sequence
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::04ab7125ddff8a36104ce74e6cc97d8f
https://doi.org/10.1016/j.tsf.2013.11.007
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