Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Figen Bekisli"'
Publikováno v:
AIP Conference Proceedings.
Stavola et al. have used IR spectroscopy to study H and D in single crystals of SnO2, In2O3, and TiO2. Their work indicates that H acts as a shallow donor in SnO2 and In2O3, while in TiO2, the electron becomes self-trapped at a Ti site near H. We hav
Publikováno v:
Physical Review B. 87
The hydrogenation of C-rich Si leads to the formation of two (almost) energetically degenerate ${\mathrm{H}}_{2}^{*}(\mathrm{C})$ complexes, each containing one substitutional C (${\mathrm{C}}_{\mathrm{s}}$) and two interstitial H atoms which are loc
Publikováno v:
Physical Review B. 86
The fundamental OD center in TiO${}_{2}$ has been studied by IR absorption spectroscopy and by theory. Our experiments reveal a single sharp OD line in oxygenated samples that we attribute to a positively charged center. In TiO${}_{2}$ samples reduce
Publikováno v:
Physical Review B. 85
Infrared absorption experiments made with polarized light yield significant insights into the possible structures of one- and two-O-H defects in SnO${}_{2}$ that are produced by thermal annealing treatments. These polarized absorption results reveal
Publikováno v:
Physical Review B. 84
Hydrogen has been found to be an important source of $n$-type conductivity in the transparent conducting oxide SnO${}_{2}$. We have studied the properties of H in SnO${}_{2}$ single crystals with infrared spectroscopy. When H or D is introduced into
Autor:
Antonio Polimeni, W. B. Fowler, Michael Stavola, Mario Capizzi, Figen Bekisli, Lanlin Wen, Silvia Rubini, Faustino Martelli, Rinaldo Trotta
Publikováno v:
Physical Review B. 81
The H-N-H center in ${\text{GaAs}}_{1\ensuremath{-}y}{\text{N}}_{y}$ that is responsible for the band-gap shift caused by H has been studied by infrared spectroscopy in conjunction with uniaxial stress and by theory. Rich, microscopic details about i
Publikováno v:
Journal of Applied Physics. 115:012001
IR spectroscopy has been used to investigate the properties of H and D in single crystals of the transparent conducting oxides, SnO2, and In2O3. H introduces several O-H stretching lines and also the broad absorption arising from free carriers. IR sp