Zobrazeno 1 - 10 of 114 090 pro vyhledávání: '"Field effect transistors"'
1
Akademický článek
Characterization and quantitative understanding of subthreshold swing of Si metal–oxide–semiconductor field effect transistors at cryogenic temperatures.
Autor: Kang, Min-Soo1 (AUTHOR) takagi@ee.t.u-tokyo.ac.jp, Toprasertpong, Kasidit1 (AUTHOR), Oka, Hiroshi2 (AUTHOR), Mori, Takahiro2 (AUTHOR), Takenaka, Mitsuru1 (AUTHOR), Takagi, Shinichi1 (AUTHOR)
Publikováno v: Journal of Applied Physics. 11/21/2024, Vol. 136 Issue 19, p1-12. 12p.
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2
Akademický článek
Temperature dependence of the low-frequency noise in AlGaN/GaN fin field effect transistors.
Autor: Liu, T. K.1 (AUTHOR), Lee, H.2 (AUTHOR), Luo, X. Y.1 (AUTHOR), Zhang, E. X.3 (AUTHOR), Schrimpf, R. D.1 (AUTHOR), Rajan, S.2 (AUTHOR), Fleetwood, D. M.1 (AUTHOR) dan.fleetwood@vanderbilt.edu
Publikováno v: Journal of Applied Physics. 10/14/2024, Vol. 136 Issue 14, p1-10. 10p.
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3
Akademický článek
Statistical analysis of displacement damage in small devices from neutron and ion irradiation.
Autor: Wampler, W. R.1 (AUTHOR) wrwampl@sandia.gov, Vizkelethy, G.1 (AUTHOR), Titze, M.1 (AUTHOR)
Publikováno v: Journal of Applied Physics. 11/28/2024, Vol. 136 Issue 20, p1-8. 8p.
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4
Akademický článek
Polarization Pruning: Reliability Enhancement of Hafnia‐Based Ferroelectric Devices for Memory and Neuromorphic Computing.
Autor: Koo, Ryun‐Han1 (AUTHOR), Shin, Wonjun1,2,3 (AUTHOR), Kim, Jangsaeng1,3 (AUTHOR), Yim, Jiyong4 (AUTHOR), Ko, Jonghyun1 (AUTHOR), Jung, Gyuweon1 (AUTHOR), Im, Jiseong1 (AUTHOR), Park, Sung‐Ho1 (AUTHOR), Kim, Jae‐Joon1 (AUTHOR), Cheema, Suraj S3 (AUTHOR), Kwon, Daewoong4 (AUTHOR) dw79kwon@hanyang.ac.kr, Lee, Jong‐Ho1,5 (AUTHOR) jhl@snu.ac.kr
Publikováno v: Advanced Science. 11/20/2024, Vol. 11 Issue 43, p1-13. 13p.
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5
Akademický článek
Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads.
Autor: Yu, Eunseon1 (AUTHOR), K, Gaurav Kumar1 (AUTHOR), Saxena, Utkarsh1 (AUTHOR), Roy, Kaushik1 (AUTHOR) kaushik@purdue.edu
Publikováno v: Scientific Reports. 11/14/2024, Vol. 12 Issue 1, p1-15. 15p.
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6
Akademický článek
NEXAFS spectroscopy of alkylated benzothienobenzothiophene thin films at the carbon and sulfur K-edges.
Autor: Chantler, Paul Alexander1 (AUTHOR), Thomsen, Lars2 (AUTHOR), Roychoudhury, Subhayan3 (AUTHOR), Glover, Chris J.2 (AUTHOR), Mitchell, Valerie2 (AUTHOR), McGregor, Sarah K. M.4,5 (AUTHOR), Lo, Shih-Chun4,5 (AUTHOR), Namdas, Ebinazar B.4,6 (AUTHOR), Prendergast, David3 (AUTHOR), McNeill, Christopher R.1 (AUTHOR) christopher.mcneill@monash.edu
Publikováno v: Journal of Chemical Physics. 11/14/2024, Vol. 161 Issue 18, p1-11. 11p.
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7
Akademický článek
Harnessing room-temperature ferroelectricity in metal oxide monolayers for advanced logic devices.
Autor: Naseer, Ateeb1 (AUTHOR), Rafiq, Musaib1 (AUTHOR), Bhowmick, Somnath2 (AUTHOR) bsomnath@iitk.ac.in, Agarwal, Amit3 (AUTHOR), Singh Chauhan, Yogesh1 (AUTHOR)
Publikováno v: Journal of Applied Physics. 11/7/2024, Vol. 136 Issue 17, p1-9. 9p.
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8
Akademický článek
Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs.
Autor: Oliveira, Joao1 (AUTHOR) jean-michel.reynes@irt-saintexupery.com, Reynes, Jean-Michel1 (AUTHOR) pascal.frey@irt-saintexupery.com, Morel, Hervé2 (AUTHOR) herve.morel@insa-lyon.fr, Frey, Pascal1 (AUTHOR) o.perrotin@altertechnology.fr, Perrotin, Olivier1,3 (AUTHOR) laurence.allirand@vitesco.com, Allirand, Laurence1,4 (AUTHOR) stephane.azzopardi@safrangroup.com, Azzopardi, Stéphane1,5 (AUTHOR) michel.piton@alstomgroup.com, Piton, Michel1,6 (AUTHOR) fabio.coccetti@irt-saintexupery.com, Coccetti, Fabio1 (AUTHOR)
Publikováno v: Energies (19961073). Nov2024, Vol. 17 Issue 21, p5476. 20p.
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9
Akademický článek
Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis.
Autor: Rai, Narendra1 (AUTHOR) narendra.rai1812@gmail.com, Sarkar, Ritam1,2 (AUTHOR) ritams321@gmail.com, Mahajan, Ashutosh3 (AUTHOR) ashutosh.mahajan@vit.ac.in, Laha, Apurba1 (AUTHOR) apurba.laha@gmail.com, Saha, Dipankar1 (AUTHOR) dsahaiitb@gmail.com, Ganguly, Swaroop1 (AUTHOR) swaroop.ganguly@gmail.com
Publikováno v: Journal of Applied Physics. 10/28/2024, Vol. 136 Issue 16, p1-13. 13p.
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10
Akademický článek
Analytical model and experimental validation of critical dependency of pGaN gated AlGaN/GaN enhancement-mode high electron mobility transistor characteristics on trap-assisted tunneling.
Autor: Jeyakumar, Ranie S.1 (AUTHOR), James, J. J.2 (AUTHOR), Ganguly, Swaroop1 (AUTHOR), Saha, Dipankar1 (AUTHOR) dipankarsaha@iitb.ac.in
Publikováno v: Journal of Applied Physics. 10/21/2024, Vol. 136 Issue 15, p1-9. 9p.
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