Zobrazeno 1 - 10
of 113
pro vyhledávání: '"Feudel, T."'
Autor:
Capello, L., Metzger, T.H., Werner, M., van den Berg, J.A., Servidori, M., Herden, M., Feudel, T.
Publikováno v:
In Materials Science & Engineering B 2005 124:200-204
Autor:
Werner, M. *, van den Berg, J.A., Armour, D.G., Carter, G., Feudel, T., Herden, M., Bersani, M., Giubertoni, D., Bailey, P., Noakes, T.C.Q.
Publikováno v:
In Materials Science & Engineering B 2004 114:198-202
Publikováno v:
In Materials Science & Engineering B 2004 114:260-263
Publikováno v:
In Materials Science & Engineering B 2004 114:42-45
Publikováno v:
In Materials Science & Engineering B 2004 114:228-231
Autor:
Capello, L., Metzger, T. H., Werner, M., van den Berg, J. A., Servidori, M., Ottaviano, L., Bongiorno, C., Mannino, G., Feudel, T., Herden, M., Holý, V.
Publikováno v:
Journal of Applied Physics; 11/15/2006, Vol. 100 Issue 10, p103533, 10p, 1 Color Photograph, 2 Charts, 7 Graphs
Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation
Publikováno v:
237 (2005): 203–207.
info:cnr-pdr/source/autori:Herden M., Gehre D., Feudel T., Wei A., Bersani M., Mannino G., van der Berg J./titolo:Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation/doi:/rivista:/anno:2005/pagina_da:203/pagina_a:207/intervallo_pagine:203–207/volume:237
info:cnr-pdr/source/autori:Herden M., Gehre D., Feudel T., Wei A., Bersani M., Mannino G., van der Berg J./titolo:Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation/doi:/rivista:/anno:2005/pagina_da:203/pagina_a:207/intervallo_pagine:203–207/volume:237
Scaling options for S/D extension junctions of MOS transistors by anneal temperature variation or by application of co-implantation were investigated. Blank wafer and test structure experiments showed that the main contribution to reduce junction dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::eaf72c3fa8e79a03494c17be4b7b30d9
http://www.cnr.it/prodotto/i/35539
http://www.cnr.it/prodotto/i/35539
Publikováno v:
EMRS 2001 Spring Meeting, June 5-8, 2001, Strasbourg, France, Symposium B: Defect Engineering of Advanced Semiconductor Devices
The properties of advanced CMOS transistors are strongly influenced by the dopant distribution in the transition region between the source (drain) and the channel. The tailoring of this distribution is achieved by appropriate halo and extension impla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4577::166f01e61583472e06819c8c3571f34c
https://www.hzdr.de/publications/Publ-4031-1
https://www.hzdr.de/publications/Publ-4031-1
Autor:
Variam, N., Jeong, U., Falk, S., Mehta, S., Posselt, M., Feudel, T., Horstmann, M., Krüger, C., Ng, C.-H.
Publikováno v:
13th International Conference on Ion Implantation Technology, Alpbach, Austria, September 17-22, 2000
Proc. 2000 Int. Conf. on Ion Implantation Technology, Alpbach, Austria, September 17-22, eds.: H. Ryssel, L. Frey, J. Gyulai, H. Glawischnig, IEEE, Piscataway, USA, 2000, IEEE Publications 00EX432, p. 42
Proc. 2000 Int. Conf. on Ion Implantation Technology, Alpbach, Austria, September 17-22, eds.: H. Ryssel, L. Frey, J. Gyulai, H. Glawischnig, IEEE, Piscataway, USA, 2000, IEEE Publications 00EX432, p. 42
Informations can be requested. Email: M.Posselt@fz-rossendorf.de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::211ace775458fd28983f1b5656d2daf6
https://www.hzdr.de/publications/Publ-3530-1
https://www.hzdr.de/publications/Publ-3530-1
Publikováno v:
Proc. 1999 Semiconductor TCAD Workshop, vol. 2, p. 7. 1, Hsinchu, Taiwan, May 1999
1999 Semiconductor TCAD Workshop, Hsinchu, Taiwan, May 4-6,1999
1999 Semiconductor TCAD Workshop, Hsinchu, Taiwan, May 4-6,1999
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::12cf4a5c49c01edb3185a9deda58c836
https://www.hzdr.de/publications/Publ-3126-1
https://www.hzdr.de/publications/Publ-3126-1