Zobrazeno 1 - 10
of 187
pro vyhledávání: '"Feudel, T."'
Autor:
Capello, L., Metzger, T.H., Werner, M., van den Berg, J.A., Servidori, M., Herden, M., Feudel, T.
Publikováno v:
In Materials Science & Engineering B 2005 124:200-204
Autor:
Werner, M. *, van den Berg, J.A., Armour, D.G., Carter, G., Feudel, T., Herden, M., Bersani, M., Giubertoni, D., Bailey, P., Noakes, T.C.Q.
Publikováno v:
In Materials Science & Engineering B 2004 114:198-202
Publikováno v:
In Materials Science & Engineering B 2004 114:260-263
Publikováno v:
In Materials Science & Engineering B 2004 114:42-45
Publikováno v:
In Materials Science & Engineering B 2004 114:228-231
Autor:
Capello, L., Metzger, T. H., Werner, M., van den Berg, J. A., Servidori, M., Ottaviano, L., Bongiorno, C., Mannino, G., Feudel, T., Herden, M., Holý, V.
Publikováno v:
Journal of Applied Physics; 11/15/2006, Vol. 100 Issue 10, p103533, 10p, 1 Color Photograph, 2 Charts, 7 Graphs
Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation
Publikováno v:
237 (2005): 203–207.
info:cnr-pdr/source/autori:Herden M., Gehre D., Feudel T., Wei A., Bersani M., Mannino G., van der Berg J./titolo:Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation/doi:/rivista:/anno:2005/pagina_da:203/pagina_a:207/intervallo_pagine:203–207/volume:237
info:cnr-pdr/source/autori:Herden M., Gehre D., Feudel T., Wei A., Bersani M., Mannino G., van der Berg J./titolo:Influence of co-implantation on the activation and diffusion of ultra-shallow extension implantation/doi:/rivista:/anno:2005/pagina_da:203/pagina_a:207/intervallo_pagine:203–207/volume:237
Scaling options for S/D extension junctions of MOS transistors by anneal temperature variation or by application of co-implantation were investigated. Blank wafer and test structure experiments showed that the main contribution to reduce junction dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::eaf72c3fa8e79a03494c17be4b7b30d9
http://www.cnr.it/prodotto/i/35539
http://www.cnr.it/prodotto/i/35539
Autor:
Park, Jung Hwan1 (AUTHOR), Pattipaka, Srinivas2 (AUTHOR), Hwang, Geon-Tae2 (AUTHOR), Park, Minok3 (AUTHOR), Woo, Yu Mi1 (AUTHOR), Kim, Young Bin4 (AUTHOR), Lee, Han Eol5 (AUTHOR), Jeong, Chang Kyu5 (AUTHOR), Zhang, Tiandong6,7 (AUTHOR), Min, Yuho8 (AUTHOR), Park, Kwi-Il8 (AUTHOR) kipark@knu.ac.kr, Lee, Keon Jae4 (AUTHOR) keonlee@kaist.ac.kr, Ryu, Jungho9 (AUTHOR) jhryu@ynu.ac.kr
Publikováno v:
Nano-Micro Letters. 8/26/2024, Vol. 16 Issue 1, p1-47. 47p.
Autor:
Hoentschel, J., Wei, A., Wiatr, M., Gehring, A., Scheiper, T., Mulfinger, R., Feudel, T., Lingner, T., Poock, A., Muehle, S., Krueger, C., Herrmann, T., Klix, W., Stenzel, R., Stephan, R., Huebler, P., Kammler, T., Shi, P., Raab, M., Greenlaw, D.
Publikováno v:
2008 IEEE International Electron Devices Meeting; 2008, p1-4, 4p
Publikováno v:
EMRS 2001 Spring Meeting, June 5-8, 2001, Strasbourg, France, Symposium B: Defect Engineering of Advanced Semiconductor Devices
The properties of advanced CMOS transistors are strongly influenced by the dopant distribution in the transition region between the source (drain) and the channel. The tailoring of this distribution is achieved by appropriate halo and extension impla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4577::166f01e61583472e06819c8c3571f34c
https://www.hzdr.de/publications/Publ-4031-1
https://www.hzdr.de/publications/Publ-4031-1