Zobrazeno 1 - 10
of 109
pro vyhledávání: '"Ferrus T"'
We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown. Character
Externí odkaz:
http://arxiv.org/abs/2111.10907
Publikováno v:
Phys. Rev. B 104, 054433 (2021)
We explore the emergence of spin-polarised flat-bands at head-to-head domain walls in a recently predicted class of antiferromagnetic topological insulators hosting planar magnetisation. We show, in the framework of quantum well physics, that by tuni
Externí odkaz:
http://arxiv.org/abs/2104.00690
We report on an optimal single-electron charge qubit for a solid-state double quantum dot (DQD) system and analyse its dynamics under a time-dependent linear detuning, using GPU accelerated numerical solutions to the time-dependent Schr\"odinger equa
Externí odkaz:
http://arxiv.org/abs/1603.05112
Autor:
Ferrus, T., Rossi, A., Andreev, A., Kodera, T., Kambara, T., Lin, W., Oda, S., Williams, D. A.
We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2
Externí odkaz:
http://arxiv.org/abs/1312.5563
We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B<7 T, we observe a strong modification of the conductance due t
Externí odkaz:
http://arxiv.org/abs/1311.4322
Publikováno v:
Applied Physics Letters 100, 133503 (2012)
Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon can be detec
Externí odkaz:
http://arxiv.org/abs/1112.3190
Publikováno v:
AIP Advances 2, 2, 022114 (2012)
We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage c
Externí odkaz:
http://arxiv.org/abs/1109.4804
Publikováno v:
Applied Physics Letters 98, 133506 (2011)
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitive
Externí odkaz:
http://arxiv.org/abs/1102.2780
Publikováno v:
Applied Physics Letters 97, 223506 (2010)
We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD. Measureme
Externí odkaz:
http://arxiv.org/abs/1008.1486
Publikováno v:
New J. Phys. 13, 10, 103012 (2011)
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped structures i
Externí odkaz:
http://arxiv.org/abs/0907.2635