Zobrazeno 1 - 10
of 352
pro vyhledávání: '"Ferro Gabriel"'
Publikováno v:
International Conference on silicon carbide and related materials 2023, Sep 2023, Sorrento (Italie), Italy. pp.17-21
The thermochromic properties (color change with temperature) of n type doped SiC wafers of different polytypes (3C, 4H and 6H) have been investigated up to 500$^\circ$C under air. It was found that 3C-SiC color passes from bright yellow at room tempe
Externí odkaz:
http://arxiv.org/abs/2410.08566
Publikováno v:
International conference on silicon carbide and related materials 2023, Sep 2023, Sorrento (Italie), Italy. pp.1-6
The chemical vapor deposition (CVD) growth of boron carbide (B x C) layers on 4H-SiC, 4{\textdegree}off substrates was studied. Depending on the polarity of the substrate, different results were obtained. On Si face, the direct CVD growth at 1600{\te
Externí odkaz:
http://arxiv.org/abs/2410.07684
Autor:
Jousseaume, Yann, Kumar, Piyush, Bathen, Marianne Etzelmüller, Cauwet, François, Grossner, Ulrike, Ferro, Gabriel
Publikováno v:
International conference on silicon carbide and related materials 2023, Sep 2023, Sorrento (Italie), Italy. pp.7-12
Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4{\textdegree}off wafers were structured in macrosteps using Si melting in a SiC-Si-SiC sandwich configuration. Si spreading difficulties were observed in the case of trench-patterned samples while
Externí odkaz:
http://arxiv.org/abs/2410.07680
Autor:
Benamra, Yamina, Auvray, Laurent, Andrieux, Jérôme, Cauwet, François, Alegre, Maria-Paz, Lloret, Fernando, Araujo, Daniel, Gutierrez, Marina, Ferro, Gabriel
In this work, the successful heteroepitaxial growth of boron carbide (B x C) on 4HSiC(0001) 4{\textdegree} off substrate using chemical vapor deposition (CVD) is reported. Towards this end, a two-step procedure was developed, involving the 4H-SiC sub
Externí odkaz:
http://arxiv.org/abs/2310.17221
Autor:
Alyabyeva, Natalia, Ding, Jacques, Sauty, Mylène, Woerle, Judith, Jousseaume, Yann, Ferro, Gabriel, McCallum, Jeffrey C., Peretti, Jacques, Johnson, Brett C., Rowe, Alistair C. H.
Publikováno v:
Physica Status Solidi (b) 260, 2200356 (2023)
Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon face of a commercial, n-type SiC wafer using a silicon melt process. The
Externí odkaz:
http://arxiv.org/abs/2208.08775
Publikováno v:
In Journal of Crystal Growth 1 September 2023 617
Autor:
Acher, Loren, Ji, Hyewon, Garino, Nicolas, Massuyeau, Florian, Pontille, Laurie, Cauwet, François, Brioude, Arnaud, Jobic, Stéphane, Ferro, Gabriel, Carole, Davy
Publikováno v:
In Ceramics International 15 April 2023 49(8):12267-12273
Publikováno v:
In Journal of Crystal Growth 1 September 2022 593
Autor:
Ferro, Gabriel, Carole, Davy, Cauwet, François, Acher, Loren, Ji, Hyewon, Chiriac, Rodica, Toche, François, Brioude, Arnaud
Publikováno v:
In Optical Materials: X August 2022 15
Autor:
Radulaski, Marina, Zhang, Jingyuan Linda, Tzeng, Yan-Kai, Lagoudakis, Konstantinos G., Ishiwata, Hitoshi, Dory, Constantin, Fischer, Kevin A., Kelaita, Yousif A., Sun, Shuo, Maurer, Peter C., Alassaad, Kassem, Ferro, Gabriel, Shen, Zhi-Xun, Melosh, Nicholas, Chu, Steven, Vučković, Jelena
We discuss the progress in integration of nanodiamonds with photonic devices for quantum optics applications. Experimental results in GaP, SiO2 and SiC-nanodiamond platforms show that various regimes of light and matter interaction can be achieved by
Externí odkaz:
http://arxiv.org/abs/1610.03183