Analytical compact model for quantization in undoped double-gate metal oxide semiconductor field effect transistors and its impact on quasi-ballistic current

Autor: Ferrier R. Clerc G. Pananakakis G. Ghibaudo F. Boeuf T. Skotnicki, M.

Publikováno v: Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes
Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2006, 45, pp.3088

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c92a6d630e926ca9fa101dd9d98a0ce9
https://hal.archives-ouvertes.fr/hal-00145092