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pro vyhledávání: '"Ferng-Jye Lay"'
Autor:
Li-Wei Sung, Xing-Jian Guo, Fei-Chang Hwang, Yi-Tsuo Wu, Wen-Chang Jiang, Chiu-Yueh Liang, Ferng-Jye Lay, Cheng-Zu Wu, Hao-Hsiung Lin, Pai-Yong Wang, Chin-An Chang
Publikováno v:
Journal of Crystal Growth. 225:550-555
InAs quantum dots were formed by depositing monolayers of InAs on GaAs, covered with InGaAs, and flanged with GaAs barriers. This formed a single quantum well in the present study, as grown by molecular-beam epitaxy. Both multiple quantum wells (MQW)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f6cea5956425d6ad03bd2316b746866
https://doi.org/10.1016/s0022-0248(01)00951-4
https://doi.org/10.1016/s0022-0248(01)00951-4
