Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Fernando Maia de Oliveira"'
Autor:
Emmanuel Wangila, Calbi Gunder, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Crystals, Vol 14, Iss 8, p 724 (2024)
We report on the growth of high-quality GaAs semiconductor materials on an AlAs/sapphire substrate by molecular beam epitaxy. The growth of GaAs on sapphire centers on a new single-step growth technique that produces higher-quality material than a pr
Externí odkaz:
https://doaj.org/article/a1ca66d1e9c142f5b570aa73450f3e3f
Autor:
Calbi Gunder, Mohammad Zamani-Alavijeh, Emmanuel Wangila, Fernando Maia de Oliveira, Aida Sheibani, Serhii Kryvyi, Paul C. Attwood, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 909 (2024)
The growth of high-composition GeSn films in the future will likely be guided by algorithms. In this study, we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16% on GaAs (001) substrates via molecula
Externí odkaz:
https://doaj.org/article/09d29963985a4887bfcc8786ce77e394
Autor:
Emmanuel Wangila, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo
Publikováno v:
Crystals, Vol 14, Iss 5, p 414 (2024)
Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were inves
Externí odkaz:
https://doaj.org/article/6aaf73730ff746378b763ebdd942b523
Autor:
Emmanuel Wangila, Peter Lytvyn, Hryhorii Stanchu, Calbi Gunder, Fernando Maia de Oliveira, Samir Saha, Subhashis Das, Nirosh Eldose, Chen Li, Mohammad Zamani-Alavijeh, Mourad Benamara, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Crystals, Vol 13, Iss 11, p 1557 (2023)
Germanium films were grown on c-plane sapphire with a 10 nm AlAs buffer layer using molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and crystal structure were investigated using ex situ characterization techniques.
Externí odkaz:
https://doaj.org/article/83d97a843ebc47b791ad56660221ca9e
Autor:
Yuriy I. Mazur, Fernando Maia de Oliveira, Shui-Qing Yu, Marcio D. Teodoro, Gregory J. Salamo, Petro M. Lytvyn, Andrian Kuchuk, V.S. Lysenko, Serhiy Kondratenko, Serhiy Malyuta, Hryhorii V. Stanchu
Publikováno v:
ACS Applied Electronic Materials. 3:4388-4397
Autor:
Hryhorii V. Stanchu, Pijush K. Ghosh, Yuriy I. Mazur, Marcio D. Teodoro, Fernando Maia de Oliveira, Morgan E. Ware, Andrian Kuchuk, Gregory J. Salamo
Publikováno v:
Nano Research
Strain engineering as one of the most powerful techniques for tuning optical and electronic properties of Ill-nitrides requires reliable methods for strain investigation. In this work, we reveal, that the linear model based on the experimental data l
Autor:
Gregory J. Salamo, Yuriy I. Mazur, Marcio D. Teodoro, Krishna Pandey, Fernando Maia de Oliveira, Andrian Kuchuk, Hryhorii V. Stanchu, Shui-Qing Yu, Mourad Benamara
Publikováno v:
Crystal Growth & Design. 21:1666-1673
The instability during the growth and processing of epitaxial GeSn layers with high Sn molar fraction and high compressive strain is still to be fully studied. In this work, the relationship among ...
Autor:
João Benhur Mokochinski, Yohandra Reyes Torres, P.P. González-Borrero, Herta Stutz Dalla Santa, Fernando Maia de Oliveira
Publikováno v:
Journal of Biological Physics. 44:93-100
This paper describes the application of the photoacoustic spectroscopic (PAS) for detection of bioactive compounds in Agaricus brasiliensis mycelium. The mycelium was cultivated by solid-state fermentation and by submerged fermentation. Vegetal resid
Autor:
Rahul Kumar, Yuriy I. Mazur, Yurii Maidaniuk, Fernando Maia de Oliveira, Shui-Qing Yu, Gregory J. Salamo, Samir K. Saha, Andrian Kuchuk, Mourad Benamara, Qigeng Yan
Publikováno v:
Applied Surface Science. 542:148554
High-quality cubic GaAs (111)A buffer layers have been grown on an atomically flat c-plane trigonal sapphire substrate having well-defined steps and terraces. A two-step growth method has been used where, at an early stage, a GaAs layer has been grow
Autor:
Adenilson J. Chiquito, Edson Rafael Cardozo de Oliveira, Marcio D. Teodoro, I. M. Costa, Fernando Maia de Oliveira, Gilmar E. Marques
Publikováno v:
Journal of Physics D: Applied Physics. 51:255106
We report the fabrication of intrinsic and Zn-doped InP single nanowire devices by the vapor–liquid–solid and photolithography techniques. Nanowires with a zincblend structure around 100 nm in radius and length at the micrometer scale were readil