Effect of substrate roughness on the nucleation and growth behaviour of microwave plasma enhanced CVD diamond films – a case study

Autor: Awadesh Kumar Mallik, Rozita Rouzbahani, Fernando Lloret, Rani Mary Joy, Ken Haenen

Publikováno v: Functional Diamond, Vol 3, Iss 1 (2023)

The influence of substrate surface roughness on the nucleation and growth of diamond films by chemical vapour deposition (CVD) is investigated. Silicon substrates were grinded with six different grit sizes of abrasive papers with a rotating wheel. Si

Externí odkaz: https://doaj.org/article/cfc7bf6cd73a490da283892489aa63c0

Improved Field Electron Emission Properties of Phosphorus and Nitrogen Co-Doped Nanocrystalline Diamond Films

Autor: Fernando Lloret, Kamatchi Jothiramalingam Sankaran, Josué Millan-Barba, Derese Desta, Rozita Rouzbahani, Paulius Pobedinskas, Marina Gutierrez, Hans-Gerd Boyen, Ken Haenen

Publikováno v: Nanomaterials, Vol 10, Iss 6, p 1024 (2020)

Nanocrystalline diamond (NCD) field emitters have attracted significant interest for vacuum microelectronics applications. This work presents an approach to enhance the field electron emission (FEE) properties of NCD films by co-doping phosphorus (P)

Externí odkaz: https://doaj.org/article/b40c3b35b20e452bb9d1dd6684e198e5

Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs

Autor: Marina Gutiérrez, Fernando Lloret, Toan T. Pham, Jesús Cañas, Daniel F. Reyes, David Eon, Julien Pernot, Daniel Araújo

Publikováno v: Nanomaterials, Vol 8, Iss 8, p 584 (2018)

In contrast to Si technology, amorphous alumina cannot act as a barrier for a carrier at diamond MOSFET gates due to their comparable bandgap. Indeed, gate leaks are generally observed in diamond/alumina gates. A control of the alumina crystallinity

Externí odkaz: https://doaj.org/article/6910da1c62af419ca41239ac26fcac86

Diamond for Electronics: Materials, Processing and Devices

Autor: Mariko Suzuki, Fernando Lloret, Pilar Villar, G. Alba, Daniel Araujo

Publikováno v: Materials
Materials 2021, 14(22), 7081
RODIN. Repositorio de Objetos de Docencia e Investigación de la Universidad de Cádiz
instname
Materials, Vol 14, Iss 7081, p 7081 (2021)

Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4c2266b35c1d2d555044f343b8e0bef
https://pubmed.ncbi.nlm.nih.gov/34832481

Selectively boron doped homoepitaxial diamond growth for power device applications

Autor: Daniel Araujo, David Eon, Fernando Lloret, Fabrice Donatini, E. Bustarret

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2021, 118 (2), pp.023504. ⟨10.1063/5.0031478⟩
Appl. Phys. Lett. 118, 023504 (2021)
RODIN: Repositorio de Objetos de Docencia e Investigación de la Universidad de Cádiz
Universidad de Cádiz
RODIN. Repositorio de Objetos de Docencia e Investigación de la Universidad de Cádiz
instname

Diamond lateral growth is a powerful technique for the design and fabrication of diamond-based power electronic devices. Growth orientation affects the diamond deposition in terms of growth rate, surface roughness, and impurity incorporation. It has

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26b2672479171dde81488cf01001bf8e
https://hal.archives-ouvertes.fr/hal-03361210/document