Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Fernando L. Aguirre"'
Publikováno v:
Frontiers in Physics, Vol 9 (2021)
We thoroughly investigate the performance of the Dynamic Memdiode Model (DMM) when used for simulating the synaptic weights in large RRAM-based cross-point arrays (CPA) intended for neuromorphic computing. The DMM is in line with Prof. Chua’s memri
Externí odkaz:
https://doaj.org/article/828e979070e146d595aac7484f0964fd
Autor:
Edgar R. Eskiviski, Maria E. Schapovaloff, Delia M. Dummel, Margarita M. Fernandez, Fernando L. Aguirre
Publikováno v:
Forest Systems, Vol 27, Iss 1, Pp eSC01-eSC01 (2018)
Aim of study: To analyze the susceptibility of Eucalyptus and hybrids species to Leptocybe invasa through field assays. Area of study: The north of the Argentine province of Misiones (Colonia Delicia). Material and methods: A total of 11 Eucalyptus
Externí odkaz:
https://doaj.org/article/b35c9a4b8bda4bfcb067955c46374d96
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:33-41
A design for reliability approach is proposed for fully integrated RF CMOS class A-to-C power amplifiers. Reliability hazards like time dependent dielectric breakdown and hot carrier injection are mapped into the design space, including the expected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01bcd7e8dc1757184506f4fb6b357f86
https://doi.org/10.1109/tdmr.2019.2957489
https://doi.org/10.1109/tdmr.2019.2957489
Piecewise-linear Modelling of CMOS Gates Propagation Delay as a Function of PVT Variations and Aging
Publikováno v:
2021 Argentine Conference on Electronics (CAE).
Due to the aggressive scaling of transistor dimensions, which took place in the last decades, chip devices are exposed to high electric fields and current densities during normal operation. These working conditions trigger degradation phenomena that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a6562b37f345e6c6fbaf60d55df98c5
https://doi.org/10.1109/cae51562.2021.9397560
https://doi.org/10.1109/cae51562.2021.9397560
Publikováno v:
AJEA.
La introducción de dieléctricos de alta constante como reemplazo del dióxido de silicio como material aislante de compuerta en dispositivos MOS ha permitido continuar con el escalamiento propuesto por la ley de Moore. Sin embargo, los nuevos mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65cd623135096bc24a705ddf90be6fd4
https://doi.org/10.33414/ajea.5.778.2020
https://doi.org/10.33414/ajea.5.778.2020
Autor:
Sebastian M. Pazos, Felix Palumbo, Fernando L. Aguirre, Juan J. Baudino, Matias N. Joglar, Fernando Silveira, Carlos E. Navarro
Publikováno v:
2020 Argentine Conference on Electronics (CAE).
Device level reliability is introduced into simulations of an optimized all-NMOSFET, cross-coupled, radiofrequency Voltage Controlled Oscillator to trace the sensitive devices and parameters that reduce circuit performance over time. Parametric DC ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08e047e4edef84ba0429f8c395f4daee
https://doi.org/10.1109/cae48787.2020.9046373
https://doi.org/10.1109/cae48787.2020.9046373
Autor:
Fernando L. Aguirre, Sebastian M. Pazos, Moshe Eizenberg, Roy Winter, Felix Palumbo, Igor Krylov
Publikováno v:
CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks. By studying experimental data at low (77 K) and room temperature (300 K),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4adac9eb176f7b493200e5d607f98972
https://doi.org/10.1016/j.sse.2018.07.006
https://doi.org/10.1016/j.sse.2018.07.006
Autor:
Nahuel Vega, Nagarajan Raghavan, Joel Molina-Reyes, A. Ranjan, Felix Palumbo, Sebastian M. Pazos, Nahuel Muller, Kin Leong Pey, M.E. Debray, Fernando L. Aguirre, Andrea Padovani
Publikováno v:
Applied Physics Express. 14:121001
The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Kn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a568e7c1823e2ed96568a2fadf23867
https://doi.org/10.35848/1882-0786/ac345d
https://doi.org/10.35848/1882-0786/ac345d
Autor:
Fernando L. Aguirre, Mario Lanza, Felix Palumbo, Yuanyuan Shi, Tianru Wu, Bin Yuan, Enrique Moreno, Santiago Boyeras, Eilam Yalon, Juan Bautista Roldán
Publikováno v:
Advanced Electronic Materials. 8:2100580
This work has been supported by the Baseline funding scheme of the King Abdullah University of Science and Technology (KAUST) in Saudi Arabia, the Ministry of Science and Technology of China (Grant No. 2018YFE0100800), the National Natural Science Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f393a56d4562ec8b5109f187513bd70f
https://doi.org/10.1002/aelm.202100580
https://doi.org/10.1002/aelm.202100580
Autor:
Felix Palumbo, Moshe Eizenberg, Igor Krylov, Fernando L. Aguirre, Sebastian M. Pazos, Roy Winter
Publikováno v:
Solid-State Electronics. 132:12-18
The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7adc5260ef1db70f824eaca551100d7
https://doi.org/10.1016/j.sse.2017.03.009
https://doi.org/10.1016/j.sse.2017.03.009