Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Fernando Avila Herrera"'
Autor:
Fernando Avila Herrera, Yoko Hirano, Takahiro Iizuka, Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Dondee Navarro, Hans Jurgen Mattausch, Akira Ito
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1293-1301 (2019)
A novel compact model has been developed, which considers the origin of the short-channel effect (SCE) on the basis of the potential distribution along the channel. Thus an enlargement of the insight into SCE suppression in advanced thin-layer MOSFET
Externí odkaz:
https://doaj.org/article/1d060eb085884fa4be2db5c018e96eaf
Autor:
Thales Augusto Ribeiro, Antonio Cerdeira, Rodrigo T. Doria, Magali Estrada, Marcelo Antonio Pavanello, Fernando Avila-Herrera
Publikováno v:
Solid-State Electronics. 159:116-122
This paper presents the extension of proposed physically-based continuous compact analytical model of triple gate junctionless nanowire transistors for accurate description of device electrical characteristics in a wide temperature range from room te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f2de5a65dfda4a855f174b1c58b17a5
https://doi.org/10.1016/j.sse.2019.03.034
https://doi.org/10.1016/j.sse.2019.03.034
Autor:
Hans Jurgen Mattausch, Y. Hirano, Hideyuki Kikuchihara, Takahiro Iizuka, Mitiko Miura-Mattausch, Akira Ito, Dondee Navarro, Fernando Avila Herrera
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1293-1301 (2019)
A novel compact model has been developed, which considers the origin of the short-channel effect (SCE) on the basis of the potential distribution along the channel. Thus an enlargement of the insight into SCE suppression in advanced thin-layer MOSFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::423905b6d6361b0ad91e19a0d4463502
https://ieeexplore.ieee.org/document/8879528/
https://ieeexplore.ieee.org/document/8879528/
Publikováno v:
2021 IEEE Latin America Electron Devices Conference (LAEDC).
This paper presents the proposal of a compact analytical model for the transcapacitances of long-channel triple gate junctionless nanowire transistors. The model is validated using comparisons against 3D TCAD simulations showing very good agreement,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::437215a172f288d5aef72d676dc0982c
https://doi.org/10.1109/laedc51812.2021.9437910
https://doi.org/10.1109/laedc51812.2021.9437910
Aggressive scaling of device and interconnect dimensions has resulted in many low-dimensional issues in the nanometer regime. This book deals with various new-generation interconnect materials and interconnect modeling, and highlights the significanc
Autor:
Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Takahiro Iizuka, Fernando Avila Herrera, Hirotaka Takatsuka, Hans Jurgen Mattausch
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Our investigation focuses on accurate circuit aging prediction for bulk MOSFETs. A self-consistent aging modeling is proposed, which considers the trap-density N trap increase as the aging origin. This N trap s considered in the Poisson equation toge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc2a12cb164056a82b477fbcb251d5e
https://doi.org/10.23919/sispad49475.2020.9241674
https://doi.org/10.23919/sispad49475.2020.9241674
Autor:
Francois Lime, Julio C. Tinoco, Fernando Avila-Herrera, Y. Hernandez-Barrios, Oana Moldovan, Magali Estrada, Antonio Cerdeira, Benjamin Iniguez
Publikováno v:
Solid-State Electronics
A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc8a2057eeb1c760b2b902748a885844
https://doi.org/10.1016/j.sse.2017.06.030
https://doi.org/10.1016/j.sse.2017.06.030
Autor:
Fernando Avila Herrera, Takahiro Iizuka, Hirotaka Takatsuka, Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Hans Jurgen Mattausch
Publikováno v:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We have modeled MOSFET-device aging based on the trap-density increase, which is included in the Poisson equation to consider aging explicitly and physically correct. To preserve consistency, the Poisson equation is solved iteratively. Measured tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0863a6c69205db825b0e409d3c26371
https://doi.org/10.1109/sispad.2019.8870469
https://doi.org/10.1109/sispad.2019.8870469
Autor:
Fernando Avila Herrera, Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Dondee Navarro, Hideyuki Kikuchihara, Takahiro Iizuka, Akira Ito, Y. Hirano
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
For enlarging the insight into efficient short-channel effect (SCE) suppression in advanced thin-layer MOSFETs, a new compact model is developed considering the origin of the SCE. It is verified that the potential distribution at the contact/channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11763d3ccc1799bba6c4ab6127c9acef
https://doi.org/10.1109/edtm.2019.8731246
https://doi.org/10.1109/edtm.2019.8731246
Autor:
Bruna Cardoso Paz, Antonio Cerdeira, Magali Estrada, Marcelo Antonio Pavanello, Fernando Avila-Herrera
Publikováno v:
Solid-State Electronics. 122:23-31
A new compact analytical model for short channel triple gate junctionless transistors is proposed. Based on a previous model for double-gate transistors which neglected the fin height effects, a new 3-D continuous model has been developed, including
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d59355861654aa2b5c2f626f3c676e1
https://doi.org/10.1016/j.sse.2016.04.013
https://doi.org/10.1016/j.sse.2016.04.013