Zobrazeno 1 - 10
of 183
pro vyhledávání: '"Fernandez-Garrido, S."'
Publikováno v:
Appl. Phys. Lett. 93, 191907 (2008)
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450-610$^{\circ}$C range. In incorp
Externí odkaz:
http://arxiv.org/abs/2401.17340
Publikováno v:
Appl. Phys. Lett. 91, 161904 (2007)
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio
Externí odkaz:
http://arxiv.org/abs/2401.17341
Publikováno v:
J. Appl. Phys. 104, 033541 (2008)
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption usi
Externí odkaz:
http://arxiv.org/abs/2401.17339
Autor:
Zettler, J. K., Hauswald, C., Corfdir, P., Musolino, M., Geelhaar, L., Riechert, H., Brandt, O., Fernández-Garrido, S.
Publikováno v:
Cryst. Growth Des. 2015, 15, 8, 4104
In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approa
Externí odkaz:
http://arxiv.org/abs/2402.00583
Autor:
Fernández-Garrido, S., Pereiro, J., González-Posada, F., Muñoz, E., Calleja, E., Redondo-Cubero, A., Gago, R.
Publikováno v:
J. Appl. Phys. 103, 046104 (2008)
Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite In$_{x}$Al$_{y}$Ga$_{1-x-y}$N (x $\approx$ 0.06, 0.02 < y < 0.27) layers grown by molecular beam epitaxy. Photoluminescence spectra show both an enhancem
Externí odkaz:
http://arxiv.org/abs/2402.00582
Autor:
Fernández-Garrido, S., Redondo-Cubero, A., Gago, R., Bertram, F., Christen, J., Luna, E., Trampert, A., Pereiro, J., Muñoz, E., Calleja, E.
Publikováno v:
J. Appl. Phys. 104, 083510 (2008)
Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction (0.01 < y < 0.
Externí odkaz:
http://arxiv.org/abs/2402.00581
Publikováno v:
JOURNAL OF APPLIED PHYSICS 106, 126102 (2009)
The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (750-850{\deg}C).Two different growth regimes were identified: compa
Externí odkaz:
http://arxiv.org/abs/2401.16328
Publikováno v:
J. Appl. Phys. 134, 175703 (2023)
We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters with their properties when they are grown on nominally (001)-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices wit
Externí odkaz:
http://arxiv.org/abs/2302.01147
Publikováno v:
Journal of Crystal Growth 571, 126242 (2021)
A wide range of n- and p-type doping levels in GaAs layers grown by chemical beam epitaxy is achieved using H$_{2}$-diluted DTBSi and CBr$_{4}$ as gas precursors for Si and C. We show that the doping level can be varied by modifying either the concen
Externí odkaz:
http://arxiv.org/abs/2102.13132
Autor:
Auzelle, T., Ullrich, F., Hietzschold, S., Sinito, C., Brackmann, S., Kowalsky, W., Mankel, E., Brandt, O., Lovrincic, R., Fernández-Garrido, S.
Publikováno v:
ACS Appl. Mater. Interfaces 2021, 13, 3, 4626-4635
We report on the optoelectronic properties of GaN$(0001)$ and $(1\bar{1}00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correlation between the acid's electronegativity and the GaN surface band be
Externí odkaz:
http://arxiv.org/abs/2009.12089