Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Fernandes Paes Pinto Rocha, Pedro"'
Autor:
Spelta, Tarek, Veillerot, Marc, Martinez, Eugénie, Mariolle, Denis, Templier, Roselyne, Chevalier, Nicolas, Fernandes Paes Pinto Rocha, Pedro, Salem, Bassem, Vauche, Laura, Hyot, Bérangère
Publikováno v:
In Solid State Electronics October 2023 208
Autor:
Fernandes Paes Pinto Rocha, Pedro1,2 (AUTHOR) pedro.fernandespaespintorocha@cea.fr, Vauche, Laura1 (AUTHOR) laura.vauche@cea.fr, Pimenta-Barros, Patricia1 (AUTHOR) patricia.pimenta-barros@cea.fr, Ruel, Simon1 (AUTHOR) simon.ruel@cea.fr, Escoffier, René1 (AUTHOR) rene.escoffier@cea.fr, Buckley, Julien1 (AUTHOR) julien.buckley@cea.fr
Publikováno v:
Energies (19961073). Apr2023, Vol. 16 Issue 7, p2978. 28p.
Autor:
Spelta, Tarek, Martinez, Eugénie, Veillerot, Marc, Fernandes Paes Pinto Rocha, Pedro, Vauche, Laura, Salem, Bassem, Hyot, Bérangère
Publikováno v:
Surface & Interface Analysis: SIA; Jul2024, Vol. 56 Issue 7, p399-407, 9p
Akademický článek
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Autor:
Zeghouane, Mohammed, Fernandes Paes Pinto Rocha, Pedro, Boubenia, Sarah, Bassani, Franck, Lefevre, Gauthier, Labau, Sebastien, Vauche, Laura, Martinez, Eugénie, Veillerot, Marc, Salem, Bassem
Publikováno v:
AIP Advances; Aug2023, Vol. 13 Issue 8, p1-8, 8p
Autor:
Fernandes Paes Pinto Rocha, Pedro, Vauche, Laura, Mohamad, Blend, Vandendaele, William, Martinez, Eugénie, Spelta, Tarek, Rochat, Névine, Gwoziecki, Romain, Salem, Bassem, Sousa, Véronique
Publikováno v:
GaN MARATHON
GaN MARATHON, Jun 2022, Venise, Italy
GaN MARATHON, Jun 2022, Venise, Italy
International audience; In this work, we investigate the impact of Post-Deposition Anneal (PDA) of Atomic-Layer Deposited (ALD) Al2O3 on etched GaN for MOS-channel High Electron Mobility Transistors (MOSc-HEMTs) Gate-First process flow using C-V meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3515::3d43975e840485adbf0688d04a178c78
https://cea.hal.science/cea-03846232
https://cea.hal.science/cea-03846232
Autor:
Martinez, Eugénie, Spelta, Tarek, Fernandes Paes Pinto Rocha, Pedro, Veillerot, Marc, Hyot, Bérangère, Vandendaele, William, Vauche, Laura, Salem, Bassem
Publikováno v:
HAXPES 2022-The 9th International Conference on Hard X-ray Photoelectron Spectroscopy
HAXPES 2022-The 9th International Conference on Hard X-ray Photoelectron Spectroscopy, May 2022, Himeji, Japan
HAXPES 2022-The 9th International Conference on Hard X-ray Photoelectron Spectroscopy, May 2022, Himeji, Japan
International audience; High-electron-mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are being developed for high power electronic. The presence of a two-dimensional electron gas (2DEG) at the AlGaN/GaN interface enables reaching hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4375f2c4581e60fdead4bcfbd84bd5dc
https://cea.hal.science/cea-03689191/document
https://cea.hal.science/cea-03689191/document