Detectores con Diodos Zero Bias (ZBD) para banda W

Autor: Gutiérrez Asueta, Jéssica, Zeljami, Kaoutar, Pascual Gutiérrez, Juan Pablo, Fernández Ibáñez, Tomás, Tazón Puente, Antonio

Publikováno v: URSI 2016, XXXI Simposium Nacional de la Unión Científica Internacional de Radio, Madrid
UCrea Repositorio Abierto de la Universidad de Cantabria
Universidad de Cantabria (UC)

Increasing demand for applications in W band has pushed the development of technologies for generation, mixing and detection of RF signals in these bands. Particularly, high performance diodes specially developed to operate at zero bias are well suit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7a45f36edfb0058dfe819439c6e1c149
http://hdl.handle.net/10902/11133

TERASENSE: THz device technology laboratory

Autor: García Pino, Antonio, Gutiérrez Asueta, Jéssica, Montero de Paz, Javier, Parrón Granados, Josep, Romeu Robert, Jordi, Vera Rodriguez, Rubén, Paco Sánchez, Pedro de, García Muñoz, Luís Enrique, González Valdés, Borja, Moreno Moreno, Miriam, Nova Lavado, Enrique, Zeljami, Kaoutar, Badolato Martín, Alejandro, Besada Sanmartín, José Luis, Fernández Ibáñez, Tomás, Fiérrez Aguilar, Julián, Grajal de la Fuente, Jesús, Pascual Gutiérrez, Juan Pablo, Tazón Puente, Antonio, Junkin, Gary

Publikováno v: URSI 2013, XXVIII Simposium Nacional de la Unión Científica Internacional de Radio, Santiago de Compostela
UCrea Repositorio Abierto de la Universidad de Cantabria
Universidad de Cantabria (UC)

The use of THz frequencies, particularly W and G band allows reaching higher resolution and deeper penetration in emerging applications like imaging, sensing, etc. The development of those new applications lays on reliable technologies, background of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c969200f1f8f56faf06c4131ab792c76
http://hdl.handle.net/10902/3756

Caracterización de diodos Schottky para banda W

Autor: Zeljami, Kaoutar, Gutiérrez Asueta, Jéssica, Pascual Gutiérrez, Juan Pablo, Fernández Ibáñez, Tomás, Tazón Puente, Antonio, Boussouis, Mohamed

Publikováno v: URSI 2012, XXVII Simposium Nacional de la Unión Científica Internacional de Radio, Elche
UCrea Repositorio Abierto de la Universidad de Cantabria
Universidad de Cantabria (UC)

In this paper, a comparison between two different techniques: low-frequency (1 MHz) and microwave frequency up to 10 GHz measurements, is presented in order to obtain the apparent capacitance of Single Anode Schottky Diodes fabricated by the Universi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f59b83b76570d15904c798c0b5840501
http://hdl.handle.net/10902/3216

Transición guía de onda-Microstrip en banda W

Autor: Gutiérrez Asueta, Jéssica, Zeljami, Kaoutar, Fernández Ibáñez, Tomás, Pascual Gutiérrez, Juan Pablo, Tazón Puente, Antonio, Mediavilla Sánchez, Ángel, Pana Tanasescu, Elena Alexandrina

Publikováno v: URSI 2011, XXVI Simposium Nacional de la Unión Científica Internacional de Radio, Leganés
UCrea Repositorio Abierto de la Universidad de Cantabria
Universidad de Cantabria (UC)

In this paper, we report the design of a waveguideto- microstrip transition at W band as well as the technical considerations to take into account during the design and fabrication. In the same way, a double back-to-back waveguideto- microstrip trans

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::aeacf1a566850fed50efbab5c9938894
http://hdl.handle.net/10902/3211

Modelado no lineal de los efectos dispersivos en los transistores HEMT de GaN

Autor: Chaibi, Mohamed, Fernández Ibáñez, Tomás, Tazón Puente, Antonio, Mediavilla Sánchez, Ángel, Aghoutane, Mohamed, Tribak, Abdelwahed

Publikováno v: URSI 2010, XXV Simposium Nacional de la Unión Científica Internacional de Radio, Bilbao
UCrea Repositorio Abierto de la Universidad de Cantabria
Universidad de Cantabria (UC)

Traps (due to the presence of surface-state densities and deep-levels) and self-heating (due to the power dissipation in the device) cause important deviation between DC and dynamic I/V characteristics that limits the output power of the device at hi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::935b7fbc58fba03a5cb40dbb7af7ee57
http://hdl.handle.net/10902/3117