Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Ferenc Korsos"'
Publikováno v:
SiliconPV Conference Proceedings, Vol 2 (2024)
The carrier lifetime characterization of solar cells is typically performed at room temperature, although the operational temperature of a solar panels can reach 60 °C. We realized a setup for laser controlled photoconductance decay (PCD) measuremen
Externí odkaz:
https://doaj.org/article/379d2a05789842109f6d1ba0e914afe3
Autor:
Viktor Samu, Ferenc Korsos, Edward D. Moore, J. Byrnes, Bálint Fodor, Leonard M. Rubin, Zoltan Kiss, Janos Szivos, Zsolt Zolnai, Anita Pongracz
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this study we investigate the effect of dose rate on defect formation due to high-dose, low-energy arsenic and boron implantation into n-type and p-type Si (100) samples. Besides room temperature (RT) micro-photoluminescence imaging (μ-PL) variou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59d4e777fe384328e803923a3f3bf0da
https://doi.org/10.1109/asmc51741.2021.9435658
https://doi.org/10.1109/asmc51741.2021.9435658
Autor:
András Bojtor, Dávid Krisztián, Ferenc Korsós, Sándor Kollarics, Gábor Paráda, Thomas Pinel, Márton Kollár, Endre Horváth, Xavier Mettan, Hidetsugu Shiozawa, Bence G. Márkus, László Forró, Ferenc Simon
Publikováno v:
Advanced Energy & Sustainability Research, Vol 5, Iss 9, Pp n/a-n/a (2024)
Understanding the recombination lifetime of charge carriers (τc) is essential for the diverse applications of photovoltaic materials, such as perovskites. The study on the inorganic perovskite, CsPbBr3, reveals recombination dynamics exceeding 1 ms
Externí odkaz:
https://doaj.org/article/08669a263b2d4235b59bf945a8ca3b43
Autor:
András Bojtor, Dávid Krisztián, Ferenc Korsós, Sándor Kollarics, Gábor Paráda, Márton Kollár, Endre Horváth, Xavier Mettan, Bence G. Márkus, László Forró, Ferenc Simon
Publikováno v:
Nanomaterials, Vol 14, Iss 21, p 1742 (2024)
The measurement and description of the charge-carrier lifetime (τc) is crucial for the wide-ranging applications of lead-halide perovskites. We present time-resolved microwave-detected photoconductivity decay (TRMCD) measurements and a detailed anal
Externí odkaz:
https://doaj.org/article/2b8d7a580de247ce986acf905005c93e
Autor:
István Soczó, Tamas Szarvas, Nicolas Laurent, Zoltan Kiss, Attila Szabo, Jordi Veirman, László Roszol, Frederic Jay, Gyorgy Nadudvari, Abdelkarim Derbouz Draoua, Mickael Albaric, Ferenc Korsos
Publikováno v:
Solar Energy Materials and Solar Cells. 186:217-226
Wafers and thicker slices of an entire n-type monocrystalline silicon ingot were studied using production-compatible electrical and optical characterization techniques. We investigated the capability of these techniques to detect efficiency limiting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1974924aa521395520d70fb599ad7d2
https://doi.org/10.1016/j.solmat.2018.06.030
https://doi.org/10.1016/j.solmat.2018.06.030
Publikováno v:
15th International Conference on Concentrator Photovoltaic Systems (CPV-15).
The emitter sheet resistance Rse on textured silicon wafers is measured by four-point-probe (4PP), eddy-current, and junction-photovoltage (JPV) techniques. In the sample set – manufactured for this study – Rse of diffused n++ and p++ layers and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efc5ecf5f4ddd43774d046b4f61316bb
https://doi.org/10.1063/1.5123811
https://doi.org/10.1063/1.5123811
Autor:
Attila Tóth, Géza László, Ferenc Korsos, Sébastien Dubois, Nicolas Enjalbert, Péter Tüttő, Krisztián Kis-Szabó
Publikováno v:
Solar Energy Materials and Solar Cells. 218:110766
A new application of the differential junction photovoltage (diff-JPV) measurement technique is introduced. The technique's capability to determine the sheet resistance of charge carriers in inversion layers Rs,inv for silicon wafers coated by differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bdb7d79871c7475d8293fa9767121d6
https://doi.org/10.1016/j.solmat.2020.110766
https://doi.org/10.1016/j.solmat.2020.110766
Autor:
Jacek Lagowski, Ferenc Korsos, Gyorgy Nadudvari, John D'Amico, Andrew Findlay, Alexandre Savtchouk, Marshall Wilson
Publikováno v:
Solid State Phenomena. :128-135
Recently introduced techniques for whole wafer mapping and imaging create new possibilities for root cause analysis of emitter passivation defects. Inline compatible PL imaging identifies such defects as localized regions with increased emitter satur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f150f38ec3cefa43c5efe6529073b10
https://doi.org/10.4028/www.scientific.net/ssp.205-206.128
https://doi.org/10.4028/www.scientific.net/ssp.205-206.128
Autor:
Kris Van Nieuwenhuysen, Ferenc Korsos, Valerie Depauw, Ivan Gordon, Hariharsudan Sivaramakrishnan Radhakrishnan, Jef Poortmans, Maarten Debucquoy, Robert Mertens
Publikováno v:
Energy Procedia. 38:950-958
This paper discusses on-going efforts towards reliable lifetime measurements on epilayers and the subsequent decoupling of the bulk and surface recombination components, both while it is still attached to the p+ substrate on which it is grown (“att
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e71c823e56cda1dd6f4111bfdf6caef
Autor:
Valentin D. Mihailetchi, Jacek Lagowski, Piotr Edelman, Ferenc Korsos, Gyorgy Nadudvari, Joerg Schmauder, Marshall Wilson, Zoltan Kiss, Sara Olibet
Publikováno v:
Energy Procedia. 38:209-215
We have recently introduced an improved QSS-μPCD lifetime measurement with a strict quality of decay control technique. This enabled unified, parameter free determination of the decay lifetime and the steady-state lifetime over a broad steady-state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30e11ff24f7f8572727ffb8996fdc238