Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Ferdinando Iucolano"'
Autor:
Giovanni Giorgino, Marcello Cioni, Cristina Miccoli, Leonardo Gervasi, Marcello Francesco Salvatore Giuffrida, Martina Ruvolo, Maria Eloisa Castagna, Giacomo Cappellini, Giuseppe Luongo, Maurizio Moschetti, Aurore Constant, Cristina Tringali, Ferdinando Iucolano, Alessandro Chini
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 6, Iss , Pp 100338- (2023)
AlGaN/GaN devices for both power and RF applications have been investigated in this work. In particular, regarding power applications, 100 V p-GaN gate transistors have been analysed both in DC and in dynamic conditions with specific attention to the
Externí odkaz:
https://doaj.org/article/d4cd7a31ce314b39a47c1070eb851cea
Autor:
Giovanni Giorgino, Giuseppe Greco, Maurizio Moschetti, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Patrick Fiorenza, Fabrizio Roccaforte, Ferdinando Iucolano
Publikováno v:
Crystals, Vol 13, Iss 9, p 1309 (2023)
The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer
Externí odkaz:
https://doaj.org/article/9d2901c427f84c1eaf7840dfab16a07e
Autor:
René Escoffier, Blend Mohamad, Julien Buckley, Romain Gwoziecki, Jérome Biscarrat, Véronique Sousa, Marc Orsatelli, Emmanuel Marcault, Julien Ranc, Roberto Modica, Ferdinando Iucolano
Publikováno v:
Energies, Vol 15, Iss 3, p 677 (2022)
Today, wide bandgap (WBG) GaN semiconductors are considered the future, allowing the improvement of power transistors. The main advantage of GaN is the presence of two-dimensional electron gas (2Deg) typically used as a conduction layer in normally-o
Externí odkaz:
https://doaj.org/article/5910a37d102d49d59c52d81bb12def71
Autor:
Alessandro Chini, Ferdinando Iucolano
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 6, Pp 491-495 (2017)
The on-resistance (RON) degradation in normally-OFF GaN high electron mobility transistors has been evaluated both experimentally and by means of numerical simulations by analyzing its drift during device pulse-mode operation. Experimental data showe
Externí odkaz:
https://doaj.org/article/9267d45b94bb471eb6c82093ab57d7e8
Publikováno v:
Materials, Vol 12, Iss 10, p 1599 (2019)
Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent pr
Externí odkaz:
https://doaj.org/article/3f4d79087e7b4d0dace7a7bc66dbadfa
Autor:
Alessandro Chini, Nicolò Zagni, Giovanni Verzellesi, Marcello Cioni, Giovanni Giorgino, Maria Concetta Nicotra, Maria Eloisa Castagna, Ferdinando Iucolano
Publikováno v:
IEEE Electron Device Letters. 44:915-918
Autor:
Scandurra, Antonino, Testa, Matteo, Giorgia, Franzò, Giuseppe, Greco, Roccaforte, Fabrizio, Maria Eloisa Castagna, Calabretta, Cristiano, Severino, Andrea, Ferdinando, Iucolano, Bruno, Elena, Mirabella, Salvatore
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4731::b8e7c7dc21e163eb1e37b5c507409932
https://hdl.handle.net/20.500.11769/563389
https://hdl.handle.net/20.500.11769/563389
Autor:
Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Maurizio Moschetti, Cettina Bottari, Mario Santi Alessandrino, Ferdinando Iucolano, Fabrizio Roccaforte
In this work, threshold voltage instability of normally off p-GaN high electron mobility transistors has been investigated by monitoring the gate current density during a device on-state. The origin of gate current variations under stress has been as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b98a27634370cb2d37721c4b0e80675
http://arxiv.org/abs/2212.06442
http://arxiv.org/abs/2212.06442
Autor:
Cristina Miccoli, Leonardo Gervasi, Viviana Cerantonio, James Pomeroy, Martin Kuball, Ferdinando Iucolano
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Autor:
Nicolò Zagni, Marcello Cioni, Maria Eloisa Castagna, Maurizio Moschetti, Ferdinando Iucolano, Giovanni Verzellesi, Alessandro Chini
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).