Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Ferdinand Schürrer"'
Publikováno v:
Advanced Functional Materials. 23:2941-2952
The contact resistance is known to severely hamper the performance of organic thin-film transistors, especially when dealing with large injection barriers, high mobility organic semiconductors, or short channel lengths. Here, the relative significanc
Publikováno v:
Organic Electronics. 13:1887-1899
We theoretically investigate the carrier injection into top-contact bottom-gate organic thin film transistors. By means of a two-dimensional drift–diffusion model, we explicitly consider thermionic and tunneling injection in combination with subseq
Autor:
Lucas Hauser, Lukas Ladinig, Anja Haase, Gregor Trimmel, Heinz-Georg Flesch, Reinhold Hetzel, Ferdinand Schürrer, Simon J. Ausserlechner, Roland Resel, Egbert Zojer, Barbara Stadlober, Michael Buchner, Karin Zojer, Manfred Gruber
Publikováno v:
physica status solidi (a). 209:181-192
A number of studies show that chemical modification of the semiconductor–dielectric interface can be used to control the threshold voltage (Vth) of organic thin film transistors (OTFTs). A promising chemical functionality to achieve that are acidic
Publikováno v:
Organic Electronics. 12:1434-1445
The carrier transport in inorganic–organic hybrid cells based on small band gap inorganic semiconductors is theoretically studied. In such cells, photo-carriers are generated at the heterojunction (due to dissociation of the donor excitons) and in
Publikováno v:
Organic Electronics. 11:1999-2011
Carrier transport in hybrid inorganic–organic solar cells has been studied by means of a two-dimensional drift-diffusion-based model including the generation and motion of excitons. The devices consist of a polymer serving as donor material and a s
Autor:
Ferdinand Schürrer, Gerald Ossig
Publikováno v:
International Journal of Nanoscience. :515-521
The simulation of the electron transport in silicon devices is usually based on a coupling of the semiclassical Boltzmann transport equation with the Poisson equation. We follow this successful approach and extend it with the effective mass Schrödin
Publikováno v:
The European Physical Journal B. 70:133-143
Deterministic numerical methods developed for solving Boltzmann-Poisson systems of carriers and phonons are applied to determine the transport properties of sub-micron semiconductor devices and bulk graphene. Kinetic effects on the far-from-equilibri
Publikováno v:
Advanced Functional Materials. 19:958-967
Recently, it has been shown by several groups that the electrical characteristics of organic thin-film transistors (OTFTs) can be significantly influenced by depositing self-assembled monolayers (SAMs) at the organic semiconductor/dielectric interfac
Publikováno v:
European Journal of Mechanics - B/Fluids. 27:202-217
Two approximate solutions to the kinetic equations for a gas mixture undergoing reversible bimolecular chemical reactions are presented. A conservative discrete ordinates method is compared to a conservative BGK approximation of the reactive Boltzman
Publikováno v:
Transport Theory and Statistical Physics. 36:299-321
An accurate description of the carrier transport in modern bipolar semiconductor devices requires the consideration of carrier‐carrier interactions. A semicontinuous version of the Boltzmann equations governing the temporal evolution of a coupled s