Zobrazeno 1 - 10
of 153
pro vyhledávání: '"Ferain, Isabelle"'
Publikováno v:
In Solid State Electronics April 2012 70:92-100
Publikováno v:
In Microelectronic Engineering 2011 88(4):522-525
Autor:
Lee, Chi-Woo, Ferain, Isabelle, Afzalian, Aryan, Yan, Ran, Akhavan, Nima Dehdashti, Razavi, Pedram, Colinge, Jean-Pierre
Publikováno v:
In Solid State Electronics February 2010 54(2):97-103
Autor:
Lee, Chi-Woo, Afzalian, Aryan, Ferain, Isabelle, Yan, Ran, Dehdashti, Nima, Byun, Ki-Yeol, Colinge, Cynthia, Xiong, Weize, Colinge, Jean-Pierre
Publikováno v:
In Microelectronic Engineering 2009 86(12):2381-2384
Akademický článek
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Autor:
Razavi, Pedram, Fagas, Giorgos, Ferain, Isabelle, Yu, Ran, Das, Samaresh, Colinge, Jean-Pierre
Publikováno v:
Journal of Applied Physics; Jun2012, Vol. 111 Issue 12, p124509, 8p
Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors.
Publikováno v:
Nature. 11/17/2011, Vol. 479 Issue 7373, p310-316. 7p. 1 Black and White Photograph, 3 Diagrams, 4 Graphs.
Autor:
Byun, Ki Yeol, Fleming, Pete, Bennett, Nick, Gity, Farzan, McNally, Patrick, Morris, Michael, Ferain, Isabelle, Colinge, Cindy
Publikováno v:
Journal of Applied Physics; Jun2011, Vol. 109 Issue 12, p123529, 5p, 2 Black and White Photographs, 1 Chart, 3 Graphs
Autor:
Akhavan, Nima Dehdashti, Afzalian, Aryan, Chi-Woo Lee, Ran Yan, Ferain, Isabelle, Razavi, Pedram, Ran Yu, Fagas, Giorgos, Colinge, Jean-Pierre
Publikováno v:
Journal of Applied Physics; Aug2010, Vol. 108 Issue 3, p034510, 8p, 1 Diagram, 10 Graphs
Autor:
Zahid, Mohamed, Pantisano, Luigi, Degraeve, Robin, Aoulaiche, Marc, Trojman, Lionel, Ferain, Isabelle, San Andres, Enrique, Schickova, Adeline, O'Connor, Rob, Groeseneken, Guido
Publikováno v:
ECS Transactions
ECS Transactions, 2008, 16 (5), pp.77
ECS Transactions, 2008, 16 (5), pp.77
International audience; onPFET's with EOT~ 1 nm shows a large hysteresis at high field in the Id-Vg characteristics, while nothing is sensed for nmos devices. An advanced charge pumping technique proves that this hysteresis in pmos is caused by hole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::14dc6e0ed796f436798520e6874587fc
https://hal.archives-ouvertes.fr/hal-02953461
https://hal.archives-ouvertes.fr/hal-02953461
