Zobrazeno 1 - 10
of 222
pro vyhledávání: '"Ferain, I."'
Autor:
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., Biesemans, S., Rogge, S.
Publikováno v:
Phys. Rev. Lett. 97, 206805 (2006)
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0608159
Autor:
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., Biesemans, S., Rogge, S.
Publikováno v:
Appl. Phys. Lett. 90, 073502 (2007)
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded by a gate
Externí odkaz:
http://arxiv.org/abs/cond-mat/0603430
Autor:
Yu, R., Nazarov, A.N., Lysenko, V.S., Das, S., Ferain, I., Razavi, P., Shayesteh, M., Kranti, A., Duffy, R., Colinge, J.-P.
Publikováno v:
In Solid State Electronics December 2013 90:28-33
Autor:
Colinge, J.P., Kranti, A., Yan, R., Lee, C.W., Ferain, I., Yu, R., Dehdashti Akhavan, N., Razavi, P.
Publikováno v:
In Solid State Electronics November-December 2011 65-66:33-37
Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering
Autor:
Ferain, I., Duffy, R., Collaert, N., van Dal, M.J.H., Pawlak, B.J., O’Sullivan, B., Witters, L., Rooyackers, R., Conard, T., Popovici, M., van Elshocht, S., Kaiser, M., Weemaes, R.G.R., Swerts, J., Jurczak, M., Lander, R.J.P., De Meyer, K.
Publikováno v:
In Solid State Electronics 2009 53(7):760-766
Autor:
Collaert, N., De Keersgieter, A., Dixit, A., Ferain, I., Lai, L.-S., Lenoble, D., Mercha, A., Nackaerts, A., Pawlak, B.J., Rooyackers, R., Schulz, T., San, K.T., Son, N.J., Van Dal, M.J.H., Verheyen, P., von Arnim, K., Witters, L., De Meyer, K., Biesemans, S., Jurczak, M.
Publikováno v:
In Solid State Electronics September 2008 52(9):1291-1296
Autor:
Trojman, L., Pantisano, L., Severi, S., San Andres, E., Hoffman, T., Ferain, I., De Gendt, S., Heyns, M., Maes, H., Groeseneken, G.
Publikováno v:
In Microelectronic Engineering 2007 84(9):2058-2062
Autor:
Ferain, I., Pantisano, L., Kottantharayil, A., Petry, J., Trojman, L., Collaert, N., Jurczak, M., De Meyer, K.
Publikováno v:
In Microelectronic Engineering 2007 84(9):1882-1885
Autor:
Toledano-Luque, M., Pantisano, L., Degraeve, R., Zahid, M.B., Ferain, I., San Andrés, E., Groeseneken, G., De Gendt, S.
Publikováno v:
In Microelectronic Engineering 2007 84(9):1943-1946
Autor:
San Andrés, E., Pantisano, L., Severi, S., Trojman, L., Ferain, I., Toledano-Luque, M., Jurczak, M., Groeseneken, G., De Gendt, S., Heyns, M.
Publikováno v:
In Microelectronic Engineering 2007 84(9):1878-1881