Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Fenta, A. S."'
Autor:
Barbosa, M. B., Correia, J. G., Lorenz, K., Fenta, A. S., Schell, J., Teixeira, R., Nogales, E., Méndez, B., Stroppa, A., Araújo, J. P.
Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $\beta$-$Ga_2O_3$ could strongly influence and contribute to the development of the next generation of power electron
Externí odkaz:
http://arxiv.org/abs/1908.09569
Autor:
Fenta Feleke S, Mulu B, Azmeraw M, Temesgen D, Dagne M, Giza M, Yimer A, Mengist Dessie A, Yenew C
Publikováno v:
International Journal of General Medicine, Vol Volume 15, Pp 8025-8031 (2022)
Sefineh Fenta Feleke,1 Berihun Mulu,1 Molla Azmeraw,2 Dessie Temesgen,2 Melsew Dagne,2 Mastewal Giza,1 Ali Yimer,1 Anteneh Mengist Dessie,3 Chalachew Yenew3 1Department of Public Health, College of Medicine and Health Sciences, Woldia University, Wol
Externí odkaz:
https://doaj.org/article/b8c59724ea14474d96ca5a8e4631f13f
Autor:
Mengist Dessie A, Fenta Feleke S, Getaye Workie S, Getinet Abebe T, Mossu Chanie Y, Kassa Yalew A
Publikováno v:
Clinical, Cosmetic and Investigational Dermatology, Vol Volume 15, Pp 791-801 (2022)
Anteneh Mengist Dessie,1 Sefineh Fenta Feleke,2 Sewnet Getaye Workie,3 Tiruayehu Getinet Abebe,1 Yonas Mossu Chanie,4 Anteneh Kassa Yalew5 1Department of Public Health, College of Health Science, Debre Tabor University, Debre Tabor, Ethiopia; 2Depart
Externí odkaz:
https://doaj.org/article/040dab4ec1024dbeb808f0c862744500
Autor:
Gonçalves, J. N., Stroppa, A., Correia, J. G., Butz, T., Picozzi, S., Fenta, A. S., Amaral, V. S.
Publikováno v:
Phys. Rev. B 86, 035145 (2012)
The hyperfine interaction between the quadrupole moment of atomic nuclei and the electric field gradient (EFG) provides information on the electronic charge distribution close to a given atomic site. In ferroelectric materials, the loss of inversion
Externí odkaz:
http://arxiv.org/abs/1203.1306
Autor:
Amorim, Carlos O., Gonçalves, João N., Tavares, Daniela S., Fenta, Abel S., Lopes, Cláudia B., Pereira, Eduarda, Trindade, Tito, Correia, João G., Amaral, Vítor S.
Publikováno v:
In Microchemical Journal May 2018 138:418-423
Autor:
Fenta, A. S.1,2,3 (AUTHOR), Amorim, C. O.2 (AUTHOR) amorim5@ua.pt, Gonçalves, J. N.2 (AUTHOR), Fortunato, N.2 (AUTHOR), Barbosa, M. B.4,5,6 (AUTHOR), Cottenier, S.7,8 (AUTHOR), Correia, J. G.3,9 (AUTHOR), Pereira, L. M. C.1 (AUTHOR), Amaral, V. S.2 (AUTHOR)
Publikováno v:
Applied Physics A: Materials Science & Processing. Aug2021, Vol. 127 Issue 8, p1-8. 8p. 1 Color Photograph, 1 Diagram, 1 Chart, 4 Graphs.
Autor:
Haas, Heinz, Roder, Jens, Correia, Joao G., Schell, Juliana, Fenta, Abel S., Vianden, Reiner, Larsen, Emil M. H., Aggelun, Patrick A., Fromsejer, Rasmus, Hemmingsen, Lars B. S., Sauer, Stephan P. A., Lupascu, Doru C., Amaral, Vítor S.
Publikováno v:
research@ua; Vol 12 (2021); 32
research@ua; vol. 12 (2021); 32
research@ua; vol. 12 (2021); 32
No abstract available.
Akademický článek
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Autor:
Barbosa, Marcelo B., Correia, João Guilherme, Lorenz, Katharina, Lopes, Armandina M. L., Oliveira, Gonçalo N. P., Fenta, Abel S., Schell, Juliana, Teixeira, Ricardo, Nogales, Emilio, Méndez, Bianchi, Stroppa, Alessandro, Araújo, João Pedro
Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor β-Ga ₂O ₃ could strongly influence and contribute to the development of the next generation of power electronics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=unidue___bib::f5e45e15b13d223300e31e60b20d733a
https://www.ncbi.nlm.nih.gov/pubmed/36028742
https://www.ncbi.nlm.nih.gov/pubmed/36028742
Akademický článek
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K zobrazení výsledku je třeba se přihlásit.
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