Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Fengwei Ji"'
Autor:
Huan Wang, Yan Lin, Junsong Jiang, Dan Dong, Fengwei Ji, Meng Zhang, Ming Jiang, Wei Gan, Hui Li, Maojun Wang, Jin Wei, Baikui Li, Xi Tang, Cungang Hu, Wenping Cao
Publikováno v:
IEEE Transactions on Electron Devices. 69:2287-2292
Autor:
Fengwei Jia, Hongli Zhu, Fengyuan Jia, Xinyue Ren, Siqi Chen, Hongming Tan, Wai Kin Victor Chan
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-14 (2024)
Abstract Recently, generative models have been gradually emerging into the extended dataset field, showcasing their advantages. However, when it comes to generating tabular data, these models often fail to satisfy the constraints of numerical columns
Externí odkaz:
https://doaj.org/article/de8307375287441bb552987a10530cb0
Investigation of conductivity modulation in vertical GaN-on-GaN PiN diode under high current density
Publikováno v:
Applied Physics Letters. 122:092102
This work studies the conductivity modulation in the vertical GaN-on-GaN PiN diode (PND) under high current density and its impact on surge current capability. Thanks to the direct-bandgap of GaN, the junction temperature at different current densiti
Publikováno v:
Journal of Integrative Agriculture, Vol 23, Iss 2, Pp 649-668 (2024)
Avian pathogenic Escherichia coli (APEC) belonging to extraintestinal pathogenic E. coli (ExPEC) can cause severe infections in extraintestinal tissues in birds and humans, such as the lungs and blood. MprA (microcin production regulation, locus A, h
Externí odkaz:
https://doaj.org/article/729e8d9a15f24e318918e73c500fdea7
Publikováno v:
Japanese Journal of Applied Physics. 60:104001
Publikováno v:
Applied Physics Letters. 119:013503
An AlGaN/GaN metal-heterostructure-metal (MHM) ultraviolet (UV) photodetector employing lateral Schottky contacts was fabricated and characterized at different temperatures. As the temperature increased from 25 to 250 °C, the photoresponsivity of th
Publikováno v:
Journal of Alloys and Compounds. 716:162-170
Low bandgap PbS quantum dots (QDs) have attracted special interests serving as promising sensitizers for developing high performance near-infrared responsive photovoltaics. However, the commonly studied successive ionic layer adsorption and reaction
Autor:
Yuanzhang Huang, Ru Zhou, Huang Bin, Jinzhang Xu, Shuhao Pan, Fengwei Ji, Lei Wan, Haihong Niu
Publikováno v:
Journal of Alloys and Compounds. 709:187-196
In contrast with the commonly used TiO 2 or ZnO electron transporters, SnO 2 , which possesses relatively low conduction band and high electron-mobility, is expected to facilitate the extraction of photogenerated electrons from quantum dots (QDs) to
Autor:
Lei Wan, Jun Xu, Xiaoli Mao, Fei Huang, Jinzhang Xu, Fengwei Ji, Haihong Niu, Ru Zhou, Guozhong Cao
Publikováno v:
Nano Energy. 30:559-569
Near-infrared responsive PbS quantum dots (QDs) have received particular attention serving as promising candidates for next generation photovoltaics. This work explores a novel anion-exchange strategy to produce high quality in-situ grown PbS QDs on
Publikováno v:
Journal of Power Sources. 333:107-117
PbS is a promising light harvester for near-infrared (NIR) responsive quantum dot (QD) photovoltaics due to its narrow bulk band gap (0.41 eV) and large exciton Bohr radius (18 nm). However, the relatively low conduction band (CB) and high-density su