Zobrazeno 1 - 10
of 196
pro vyhledávání: '"Fengqiu Wang"'
Autor:
Yue Wang, Junzhuan Wang, Ruijuan Tian, Jiapeng Zheng, Lei Shao, Bo Liu, Fengqiu Wang, Xuetao Gan, Yi Shi, Xiaomu Wang
Publikováno v:
Research, Vol 7 (2024)
Integrated 2-dimensional (2D) photonic devices such as monolayer waveguide has generated exceptional interest because of their ultimate thinness. In particular, they potentially permit stereo photonic architecture through bond-free van der Waals inte
Externí odkaz:
https://doaj.org/article/3200e16a5a6b44c181ba526e8e4f45bb
Autor:
Binjie Zheng, Junzhuan Wang, Qianghua Wang, Xin Su, Tianye Huang, Songlin Li, Fengqiu Wang, Yi Shi, Xiaomu Wang
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
The exciton Mott transition refers to a transition from an insulating state of gas-like excitons to strongly correlated electron-hole plasma phases in photoexcited semiconductors. Here the authors experimentally study such a transition in black phosp
Externí odkaz:
https://doaj.org/article/d1860f1cdee147cfa9d7246b8b0db8dc
Autor:
Yuting Zhang, Shuchao Qin, Qianqian Du, Yuquan Gan, Jing Zhao, Mengru Li, Xialian Zheng, Anran Wang, Yunlong Liu, Shuhong Li, Ruixin Dong, Zhonghui Nie, Cailong Liu, Wenjun Wang, Fengqiu Wang
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 2, Pp n/a-n/a (2023)
Abstract Organic semiconductor crystals herald new opportunities for fabricating high‐performance optoelectronic devices, due to their intrinsic properties including outstanding charge transport properties, long exciton lifetime, and diffusion leng
Externí odkaz:
https://doaj.org/article/c7b3f11ac3e1418eab2699047ddde6b8
Autor:
Yuquan Gan, Shuchao Qin, Qianqian Du, Yuting Zhang, Jing Zhao, Mengru Li, Anran Wang, Yunlong Liu, Shuhong Li, Ruixin Dong, Linglong Zhang, Xiaoqing Chen, Cailong Liu, Wenjun Wang, Fengqiu Wang
Publikováno v:
Advanced Science, Vol 9, Iss 35, Pp n/a-n/a (2022)
Abstract Organic materials exhibit efficient light absorption and low‐temperature, large‐scale processability, and have stimulated enormous research efforts for next‐generation optoelectronics. While, high‐performance organic devices with fas
Externí odkaz:
https://doaj.org/article/181cfd703a194d93b1cfbbcefba8072a
Publikováno v:
Light: Science & Applications, Vol 9, Iss 1, Pp 1-16 (2020)
Semiconductor photocarriers: Exploring excitons in two dimensions Electrons and positively charged regions in semiconductors known as holes can form tightly bound states called excitons, offering new opportunities in optoelectronics and in ‘valleyt
Externí odkaz:
https://doaj.org/article/5911e1cbcf114f3b9fd6a99f7a66ac10
Autor:
Yujie Liu, Chuan Liu, Xiaomu Wang, Liang He, Xiangang Wan, Yongbing Xu, Yi Shi, Rong Zhang, Fengqiu Wang
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-7 (2018)
Abstract Heterostructures based on two-dimensional (2D) materials have sparked wide interests in both fundamental physics and applied devices. Recently, Dirac/Weyl semimetals are emerging as capable functional materials for optoelectronic devices. Ho
Externí odkaz:
https://doaj.org/article/763fb76b3d584d7fa0211a7064b2b58a
Autor:
Xia Wan, Yang Xu, Hongwei Guo, Khurram Shehzad, Ayaz Ali, Yuan Liu, Jianyi Yang, Daoxin Dai, Cheng-Te Lin, Liwei Liu, Hung-Chieh Cheng, Fengqiu Wang, Xiaomu Wang, Hai Lu, Weida Hu, Xiaodong Pi, Yaping Dan, Jikui Luo, Tawfique Hasan, Xiangfeng Duan, Xinming Li, Jianbin Xu, Deren Yang, Tianling Ren, Bin Yu
Publikováno v:
npj 2D Materials and Applications, Vol 1, Iss 1, Pp 1-8 (2017)
Optoelectronics: Graphene breaks limit of silicon-based UV detection A high-performance graphene/silicon ultraviolet (UV) photodetector significantly increases the upper-limit of traditional silicon-based UV detectors. A team led by Yang Xu at China
Externí odkaz:
https://doaj.org/article/5ffb3f7e230c4261937f4ebc80feeb75
Autor:
Chunhui Zhu, Fengqiu Wang, Yafei Meng, Xiang Yuan, Faxian Xiu, Hongyu Luo, Yazhou Wang, Jianfeng Li, Xinjie Lv, Liang He, Yongbing Xu, Junfeng Liu, Chao Zhang, Yi Shi, Rong Zhang, Shining Zhu
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
Mid-infrared pulsed sources are technologically important for sensing and spectroscopy but their implementation is challenging due to the lack of a tuneable optical switch. Here, the authors address this limitation by engineering the band structure o
Externí odkaz:
https://doaj.org/article/dba4438022af42588cc66a08dd35a8b0
Autor:
Bolin Lai, Xiaoqian Zhang, Xianyang Lu, Long Yang, Junlin Wang, Yequan Chen, Yafei Zhao, Yao Li, Xuezhong Ruan, Xuefeng Wang, Jun Du, Wenqing Liu, Fengqiu Wang, Liang He, Bo Liu, Yongbing Xu
Publikováno v:
AIP Advances, Vol 9, Iss 6, Pp 065002-065002-5 (2019)
Single crystalline Co2FeAl films with different thicknesses varying from 3.6 to 10.6 nm have been grown on GaAs (001) using Molecule Beam Epitaxy (MBE). The magnetic characteristics were investigated by in-situ magneto-optical Kerr effect (MOKE). For
Externí odkaz:
https://doaj.org/article/3c10d9b052924d5f88c41c679ac0d3bb
Autor:
Zhonghui Nie, Ion Cristian Edmond Turcu, Yao Li, Xiaoqian Zhang, Liang He, Jian Tu, Zhiqiang Ni, Huangfeng Xu, Yequan Chen, Xuezhong Ruan, Fabio Frassetto, Paolo Miotti, Nicola Fabris, Luca Poletto, Jing Wu, Qiangsheng Lu, Chang Liu, Thorsten Kampen, Ya Zhai, Wenqing Liu, Cephise Cacho, Xuefeng Wang, Fengqiu Wang, Yi Shi, Rong Zhang, Yongbing Xu
Publikováno v:
Applied Sciences, Vol 9, Iss 3, p 370 (2019)
A new femtosecond, Extreme Ultraviolet (EUV), Time Resolved Spin-Angle Resolved Photo-Emission Spectroscopy (TR-Spin-ARPES) beamline was developed for ultrafast materials research and development. This 50-fs laser-driven, table-top beamline is an int
Externí odkaz:
https://doaj.org/article/037b2a910b2a4f12a8c40b3a6b5a4a71