Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Fengqiu Jiang"'
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 9, Pp n/a-n/a (2021)
The application fields of infrared photodetectors are quite extensive. Compared with traditional infrared photodetection materials such as IV and III–V semiconductors, newly emerging low‐dimensional materials and quantum materials (e.g., 2D mater
Externí odkaz:
https://doaj.org/article/1e949c1b23a64b999c6e6315f65c227c
Autor:
Fengqiu Jiang, Yuyu Bu
Publikováno v:
Sensors, Vol 22, Iss 11, p 4239 (2022)
GaN-based quantum well infrared detectors can make up for the weakness of GaAs-based quantum well infrared detectors for short-wave infrared detection. In this work, GaN/AlN (1.8 nm/1.8 nm) multi-quantum wells have been epitaxially grown on sapphire
Externí odkaz:
https://doaj.org/article/fcc9b3123095459aa577280037ea2c02
Publikováno v:
ACS Sustainable Chemistry & Engineering. 8:9184-9194
In this work, we fabricate a semitransparent BiVO4 photoanode via the synergistic effect of indium (In) doping and anoxic annealing. An optimized photocurrent density of 3.6 mA cm–2 at 2 V versus r...
Publikováno v:
Electrochimica Acta. 366:137288
In this work, a typical BiVO4 photoanode is employed to explore the performance improving mechanism by surface electrochemical reduction. Corresponding results demonstrate some new information that nanoparticle-like amorphous layer is formed on the s
Publikováno v:
Biosensors and Bioelectronics. 150:111903
In this work, we fabricate a novel bismuth vanadate/two dimensional-carbon nitride/deoxyribonucleic acid (BiVO4/2D-C3N4/DNA) aptamer photoelectrochemical (PEC) sensor, and this sensor provides a record detection sensitivity area (5 × 10−7 μg/L -