Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Fengbo Liao"'
Autor:
Qiao, Sun, Fengbo, Liao, Yafang, Xie, Jialin, Li, Mengxiao, Lian, Xichen, Zhang, Keming, Zhang, Bingzhi, Zou, Yian, Yin
Publikováno v:
In Micro and Nanostructures June 2023 178
Autor:
Fengbo Liao, Keming Zhang, Ni Zeng, Mengxiao Lian, Jialin Li, Xichen Zhang, Ziwei Tian, Yi-An Yin
Publikováno v:
Journal of Electronic Materials. 51:3613-3623
Autor:
Fengbo Liao, Jialin Li, Ni Zeng, Yian Yin, Mengxiao Lian, Xichen Zhang, Keming Zhang, Wu Qi-bao
Publikováno v:
Journal of Electronic Materials. 51:126-132
In this paper, the effects of a polarization-modulated quaternary AlInGaN quantum barrier on carrier capture capability and the overlap rate of wave functions in deep-ultraviolet light-emitting diodes (DUV-LEDs) are numerically investigated. By contr
Autor:
Jialin Li, Yian Yin, Fengbo Liao, Mengxiao Lian, Xichen Zhang, Keming Zhang, Yafang Xie, You Wu, Bingzhi Zou, Zhixiang Zhang, Jingbo Li
Publikováno v:
Materials Science in Semiconductor Processing. 153:107152
Autor:
Jialin Li, Yian Yin, Fengbo Liao, Mengxiao Lian, Xichen Zhang, Keming Zhang, Yafang Xie, You Wu, Bingzhi Zou, Zhixiang Zhang, Jingbo Li
Publikováno v:
Micro and Nanostructures. 168:207329
Publikováno v:
Applied Optics. 61:4494
In this paper, a structure design using quaternary AlInGaN as multiple-symmetrical-stair-shaped quantum barriers without an electron blocking layer is shown. The results show this design mitigates the droop effect to ∼ 0.1 % , and the internal quan
Autor:
Ni Zeng, Keming Zhang, Jingbo Li, Mengxiao Lian, Fengbo Liao, Xichen Zhang, Yian Yin, Jialin Li
Publikováno v:
Superlattices and Microstructures. 161:107064
As we all know, the normally-off HEMT is very important to the safety of power electronic systems. To increase the threshold voltage of the device, this article proposes to cover Al2O3 on the recessed P-GaN to form the recessed p-GaN HEMT covered wit
Publikováno v:
Superlattices and Microstructures. 145:106601
The characteristics of AlGaN-based deep ultraviolet light-emitting diodes (UV LEDs) with quaternary AlInGaN streamlined quantum barriers (QBs) are investigated in this paper. The simulated results show that the light output power and the internal qua