Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications

Autor: Fengben Xi, Yi Han, Andreas Grenmyr, Detlev Grutzmacher, Qing-Tai Zhao

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 10, Pp 569-574 (2022)

In this paper, artificial synapses based on four terminal ferroelectric Schottky barrier field effect transistors (FE-SBFETs) are experimentally demonstrated. The ferroelectric polarization switching dynamics gradually modulate the Schottky barriers,

Externí odkaz: https://doaj.org/article/c5574ce76989422fa5326a7538932bbf

Experimental and Theoretical Analysis of Stateful Logic in Passive and Active Crossbar Arrays for Computation-in-Memory

Autor: Christopher Bengel, Stefan Wiefels, Vikas Rana, Hsin-Yu Chen, Qing-Tai Zhao, Rainer Waser, Henriette Padberg, Fengben Xi, Stephan Menzel

Publikováno v: IEEE (2022). doi:10.1109/ISCAS48785.2022.9937565
2022 IEEE International Symposium on Circuits and Systems (ISCAS) : [Proceedings]-IEEE, 2022.-ISBN 978-1-6654-8485-5-doi:10.1109/ISCAS48785.2022.9937565
2022 IEEE International Symposium on Circuits and Systems (ISCAS) : [Proceedings]-IEEE, 2022.-ISBN 978-1-6654-8485-5-doi:10.1109/ISCAS48785.2022.99375652022 IEEE International Symposium on Circuits and Systems (ISCAS), Austin, TX, 2022-05-27-2022-06-01

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::825adebcd00dda50fddd8b21479dc383
https://hdl.handle.net/2128/33138

Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes

Autor: Fengben Xi, Andreas Grenmyr, Jiayuan Zhang, Yi Han, Jin Hee Bae, Detlev Grützmacher, Qing‐Tai Zhao

Publikováno v: Advanced electronic materials 9(3), 2201155-(2023). doi:10.1002/aelm.202201155

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14ddba3c764d5d1c29c97278769082db
https://doi.org/10.1002/aelm.202201155

Impact of the Backgate on the Performance of SOI UTBB nMOSFETs at Cryogenic Temperatures

Autor: Slawomir Prucnal, Yi Han, Detlev Grützmacher, Fengben Xi, Susanne Hoffmann-Eifert, Frederic Allibert, Qing-Tai Zhao, Joachim Knoch, Jin-Hee Bae, Ionut Radu

Publikováno v: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS).

In this paper we present an experimental investigation on SOI UTBB n-MOSFETs at cryogenic temperatures. The device has a silicide source/drain with dopant segregation formed by "Implantation Into Silicide" (IIS) process. The controllability of the ba

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3337408f897f60e7dbc21e0d91507fba
https://doi.org/10.1109/eurosoi-ulis53016.2021.9560182

Ferroelectric Devices for Neuromorphic Computing

Autor: Qing-Tai Zhao, Fengben Xi, Yi Han, Andreas Grenmyr, Jin Hee Bae, Detlev Gruetzmacher

Publikováno v: ECS Meeting Abstracts. :1183-1183

Neuromorphic computing inspired by the neural network systems of the human brain enables energy efficient computing for big-data processing. A neural network is formed by thousands or even millions of neurons which are connected by even a higher numb

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7d4bcdeb7cf2f68d5de2b97d4a8f1bd1
https://doi.org/10.1149/ma2022-02321183mtgabs