Výsledky vyhledávání - "Feng-Tso Chien"

Akademický článek

Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process

Autor: Hsien-Chin Chiu, Chia-Hao Liu, Yi-Sheng Chang, Hsuan-Ling Kao, Rong Xuan, Chih-Wei Hu, Feng-Tso Chien

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 7, Pp 984-989 (2019)

The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequenc

Externí odkaz: https://doaj.org/article/000590ccc47540fb9f603b6e97df1298

Zobrazit plný text záznamu

Akademický článek

Thin-Film Transistors

Autor: Feng-Tso Chien, Yu-Wei Chang, Jo-Chin Liu

Publikováno v: Membranes, Vol 12, Iss 4, p 411 (2022)

Thin film transistors (TFTs) are key components used in a variety of fields such as solar cell, active-matrix liquid crystal displays (AM-LCDs), pixel switches, peripheral driver circuit and flexible electronics [...]

Externí odkaz: https://doaj.org/article/bc2b072fc56f46a08b282d34d7e83837

Zobrazit plný text záznamu

Plný text ve formátu HTML

Akademický článek

2.4 kV Vertical GaN PN Diodes on Free Standing GaN Wafer Using CMOS-Compatible Contact Materials

Autor: Xinke Liu, Hsien-Chin Chiu, Hou-Yu Wang, Cong Hu, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 6, Pp 825-829 (2018)

This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate t

Externí odkaz: https://doaj.org/article/885228ade1b04a168d4c5b585890d0a2

Zobrazit plný text záznamu

Akademický článek

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Autor: Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien

Publikováno v: Membranes, Vol 11, Iss 10, p 727 (2021)

A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selecte

Externí odkaz: https://doaj.org/article/cde577e1978b498689bb27dddd3f8e06

Zobrazit plný text záznamu

Akademický článek

Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor

Autor: Feng-Tso Chien, Jing Ye, Wei-Cheng Yen, Chii-Wen Chen, Cheng-Li Lin, Yao-Tsung Tsai

Publikováno v: Membranes, Vol 11, Iss 2, p 103 (2021)

The raised source/drain (RSD) structure is one of thin film transistor designs that is often used to improve device characteristics. Many studies have mentioned that the high impact ionization rate occurring at a drain side can be reduced, owing to a

Externí odkaz: https://doaj.org/article/06888b719a3c43df9098e9e7446fbc40

Zobrazit plný text záznamu

Plný text ve formátu HTML

Akademický článek

150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers

Autor: Feng-Tso Chien, Zhi-Zhe Wang, Cheng-Li Lin, Tsung-Kuei Kang, Chii-Wen Chen, Hsien-Chin Chiu

Publikováno v: Micromachines, Vol 11, Iss 5, p 504 (2020)

A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (Ron,sp) of a 15

Externí odkaz: https://doaj.org/article/c1f16233e61b4e2a9b2e97ab8cf71aca

Zobrazit plný text záznamu

Akademický článek

High Threshold Voltage Normally off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-Rich LPCVD-SiNx Gate Insulator

Autor: Hsiang-Chun Wang, Hsien-Chin Chiu, Chong-Rong Huang, Hsuan-Ling Kao, Feng-Tso Chien

Publikováno v: Energies, Vol 13, Iss 10, p 2479 (2020)

A high threshold voltage (VTH) normally off GaN MISHEMTs with a uniform threshold voltage distribution (VTH = 4.25 ± 0.1 V at IDS = 1 μA/mm) were demonstrated by the selective area ohmic regrowth technique together with an Si-rich LPCVD-SiNx gate i

Externí odkaz: https://doaj.org/article/b135c85cc143452fa0e2d1988805d04a

Zobrazit plný text záznamu

Plný text ve formátu HTML

Dissertation/ Thesis

High Speed Transimpedance Amplifier Design and ITs Application on Optical Receiver

Autor: Feng-Tso Chien, 簡鳳佐

88
Monolithic GaAs MESFETs transimpedance (TZ) amplifier has been designed, fabricated, and characterized. Symmetric and asymmetric TZ amplifiers are fabricated and described. Two different active feedback architectures, CG-FET and GS-FET, are c

Externí odkaz: http://ndltd.ncl.edu.tw/handle/38312714071329115718