Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Feng-Ming Lee"'
Autor:
Feng-Ming Lee, 李峰旻
96
urface emitting light source now is regarding as a very important light source for many optoelectronic applications, such as high-speed LANs, computer links, optical interconnects, laser printing, display, optical mouse etc. In addition, the
urface emitting light source now is regarding as a very important light source for many optoelectronic applications, such as high-speed LANs, computer links, optical interconnects, laser printing, display, optical mouse etc. In addition, the
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/69556914010193994338
Autor:
Feng-Ming Lee, 李峰名
87
This thesis implements the RF frond-end of Personal Access Communication System Unlicensed version B (PACS_UB), which is a time-division duplex system, operating in the band of 1920 to 1930 MHz. The design of RF frond-end starts with link bud
This thesis implements the RF frond-end of Personal Access Communication System Unlicensed version B (PACS_UB), which is a time-division duplex system, operating in the band of 1920 to 1930 MHz. The design of RF frond-end starts with link bud
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/19881558414619634755
Autor:
Po-Hao Tseng, Yu-Hsuan Lin, Tian-Cih Bo, Feng-Ming Lee, Yu-Yu Lin, Ming-Hsiu Lee, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
Po-Hao Tseng, Yu-Hsuan Lin, Feng-Ming Lee, Tian-Cig Bo, Yung-Chun Li, Ming-Hsiu Lee, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device
Autor:
Yi-Yueh, Chen, Feng-Ming, Lee, Yu-Yu, Lin, Chih-Hsiung, Lee, Wei-Chen, Chen, Che-Kai, Shu, Su-Jien, Lin, Shou-Yi, Chang, Chih-Yuan, Lu
Publikováno v:
Materials; Volume 15; Issue 10; Pages: 3640
To lower the charge leakage of a floating gate device and improve the operation performance of memory devices toward a smaller structure size and a higher component capability, two new types of floating gates composed of pn-type polysilicon or np-typ
Autor:
Yu-Hsuan Lin, Chen Liang-Yu, Hsiang-Lan Lung, Chih-Yuan Lu, Kuang-Yeu Hsieh, Chih-Chang Hsieh, Yun-Yuan Wang, Han-Wen Hu, Yung-Chun Li, Feng-Ming Lee, Po-Hao Tseng, Keh-Chung Wang, Ming-Hsiu Lee
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We present an in-memory-searching (IMS) architecture which features ultra-high parallel operation. It is based-on high-density, low-power, and low-cost 3D-NAND technology. The IMS unit cell composition, operation algorithm, and array structures are d
Autor:
Shyi-Yuan Wu, Y. H. Ho, Hsu Kai-Chieh, Yu-Hsuan Lin, Tseung-Yuen Tseng, Chih-Chung Yang, Dai-Ying Lee, Hsiang-Lan Lung, Kuang-Hao Chiang, C. Y. Lei, Ming-Hsiu Lee, Yan-Xiao Lin, Feng-Ming Lee, Keh-Chung Wang, Chen-Chien Li, Chin-Yu Chen, Kuen-Yi Chen, Chun-Chang Lu, Cha-Hsin Lin
Publikováno v:
IEEE Electron Device Letters. 38:1224-1227
This letter addresses two difficult challenges for transition metal oxide resistive random access memories (ReRAMs)—sensitivity to operation temperature and random fluctuation of resistance value. A careful study of a WO x ReRAM array reveals that
Autor:
Kuang-Hao Chiang, Yu-Yu Lin, Jau-Yi Wu, Tseung-Yuen Tseng, Ming-Hsiu Lee, Chih-Yuan Lu, Erh-Kun Lai, Yu-Hsuan Lin, Dai-Ying Lee, Feng-Ming Lee
Publikováno v:
IEEE Electron Device Letters. 37:1426-1429
Resistance of transition metal oxide (TMO) resistive random access memory (ReRAM) depends sharply on temperature, resulting in drastic memory window loss at high temperature. Thus, it is difficult to design the ReRAM that can serve a wide range of op
Autor:
Keh-Chung Wang, Feng-Ming Lee, Yu-Yu Lin, G.Y. Chen, Chun-Chang Lu, Po-Hao Tseng, K.Y. Hsieh, Meng-Chyi Wu, H.L. Lung, Dai-Ying Lee, Ming-Hsiu Lee, K.C. Hsu
Publikováno v:
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
The forming voltage and temperature for creating the first filament in the RRAM device are found having impacts on RRAM reliability. The correlation between the forming temperature and the required voltage was evaluated on the WOx/TiOx RRAM devices,
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
The resistance of transition metal oxide (TMO) ReRAM is a strong function of temperature which resulting in the variation of the memory window and limiting the applications in wide-temperature range or multi-level data storage. This paper investigate