Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Feng-Min Lai"'
Autor:
Ming-Jie Zhao, Yao-Tian Wang, Jia-Hao Yan, Hai-Cheng Li, Hua Xu, Dong-Sing Wuu, Wan-Yu Wu, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 2, Pp 100722- (2024)
High-k hafnium oxide (HfO2) film was prepared by high power impulse magnetron sputtering (HiPIMS). The influences of oxygen supply on the plasma state, film properties and TFT performance were investigated. The films are near-stoichiometric and prefe
Externí odkaz:
https://doaj.org/article/161869cfc05b4834a490a4ffa61334b9
Autor:
Ming-Jie Zhao, Jie Huang, Hai-Cheng Li, Qi-Zhen Chen, Qi-Hui Huang, Wan-Yu Wu, Dong-Sing Wuu, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 2, Pp 100672- (2024)
High-performance P-type cuprous oxide (Cu2O) film was prepared at room temperature by high power impulse magnetron sputtering. Optical emission spectra revealed that the ratio of Cu radicals/ions in the plasma significantly decreased with increasing
Externí odkaz:
https://doaj.org/article/618f164bafba41b785f7e7f3bc141019
Autor:
Xiao-Ying Zhang, Duan-Chen Peng, Jia-Hao Yan, Zhi-Xuan Zhang, Yu-Jiao Ruan, Juan Zuo, An Xie, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Journal of Materials Research and Technology, Vol 27, Iss , Pp 4213-4223 (2023)
Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, AlN films with different plasma powers were grown by remote plasma atomic layer deposition. Saturation experiments have been applied in the plasma pow
Externí odkaz:
https://doaj.org/article/e0435603c1124616b41be1f7f8e15e96
Autor:
Mingjie Zhao, Jiahao Yan, Yaotian Wang, Qizhen Chen, Rongjun Cao, Hua Xu, Dong-Sing Wuu, Wan-Yu Wu, Feng-Min Lai, Shui-Yang Lien, Wenzhang Zhu
Publikováno v:
Nanomaterials, Vol 14, Iss 8, p 690 (2024)
It is usually difficult to realize high mobility together with a low threshold voltage and good stability for amorphous oxide thin-film transistors (TFTs). In addition, a low fabrication temperature is preferred in terms of enhancing compatibility wi
Externí odkaz:
https://doaj.org/article/f1e593b8d6de457a9414f29f81bdbaf3
Autor:
Pao-Hsun Huang, Yu-Quan Zhu, Sufen Wei, Yi Liu, Chien-Jung Huang, Feng-Min Lai, Yan Liu, Shui-Yang Lien
Publikováno v:
Journal of Materials Research and Technology, Vol 24, Iss , Pp 4618-4626 (2023)
The RF-sputtered β-Ga2O3 films prepared on sapphire substrates were treated by rapid thermal annealing (RTA) with an ultrafast processing time of 30 s. The effects of RTA at different process temperatures from 600 to 800 °C on the β-Ga2O3 films we
Externí odkaz:
https://doaj.org/article/10ba8c08ac2a413ab39e7da68c5a2e30
Autor:
Feng-Min Lai, Tan-Chih Chang
Publikováno v:
Sensors & Materials; 2024, Vol. 36 Issue 4, Part 1, p1115-1125, 11p
Autor:
Xiao-Ying Zhang, Jing Han, Yao-Tian Wang, Yu-Jiao Ruan, Wan-Yu Wu, Dong-Sing Wuu, Juan Zuo, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Solar Energy Materials and Solar Cells. 257:112384
Publikováno v:
Sensors and Materials. 34:3429
Publikováno v:
Sensors and Materials. 33:4069
Autor:
Jean Shyan Wang, Yuh-Wen Chen, Hwa Wei Chi, Jen-Yung Lin, Kuo-Chih Su, Ping-Win Lui, Feng-Min Lai
Publikováno v:
Energy Procedia. 143:553-558
In the case of caring disable patients in hospital, transportation and security of a patient under supervision of a nurse is crucially important. We developed an intelligent patient bed here, with the assistance of contactless eye tracker which works