Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Feng Sun-Qi"'
Publikováno v:
Acta Physico-Chimica Sinica. 14:210-213
Publikováno v:
Acta Physico-Chimica Sinica. 11:632-635
Autor:
Xing Ying-Jie, Xue Zeng-Quan, Feng Sun-Qi, YU Da-Peng, Yan Han-Fei, Hang Qing-Ling, XI Zhong-He
Publikováno v:
Chinese Physics Letters. 19:240-242
Amorphous silicon nanowires were prepared by heating an Si substrate at high temperatures using an Ni (or Au) catalyst. The nanowires have a diameter of 10-40 nm and a length of up to several tens of micrometres. Unlike the well-known vapour-liquid-s
Publikováno v:
Solid State Communications. 82:167-170
The superconductivity has been detected in the Sn-doped C60 samples by AC susceptibility measurements. The Sn-doped C60 sample is insensitive to air. EDS and XRD examinations show that the Sn-atoms have intercalated into the interstitial positions of
Autor:
Wu En, Yin Bo, Zhu Xing, Gu Zhen-Nan, Qian Jiuxin, Feng Sun-Qi, Jin Zhao-Xia, Fu Ji-Shi, Mao Jin-Chang, Zhou Xi-Huang
Publikováno v:
Solid State Communications. 80:639-642
The linearly polarized Cu L3-edge x-ray-absorption near-edge structure (XANES) of Bi2Sr2CaCu2O8 + delta has been measured and the spectra are interpreted by the full multiple-scattering approach in real space. The polarized spectra over a range of 20
Publikováno v:
The Journal of Physical Chemistry. 95:9615-9618
The authors have synthesized C[sub 60] in gram quantities using the Kraetschmer and Huffman technique. The arc vaporization of a graphite rod was performed at 100 Torr in a static helium atmosphere. The yield by toluene extraction is 7% of the soot p
Autor:
Lin, Chin, Lu, Guo, Liu, Zun-Xiao, Sun, Yun-Xi, Lan, Jian, Li, Guo-Zhong, Feng, Sun-Qi, Wei, Chong-De, Gan, Zi-Zhao, Liu, Zhen-Yi, Zheng, Xiang-Miao, Lin, Bing-Xiong
Publikováno v:
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics; Jun1987, Vol. 1 Issue 2, p455-459, 5p
Publikováno v:
Superconductor Science & Technology; 1993, Vol. 6 Issue 10, p715-720, 6p
Publikováno v:
Solid State Communications; April 1995, Vol. 94 Issue: 1 p21-25, 5p
Akademický článek
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