Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Feng Q. Liu"'
Autor:
Chenhao Ge, Feng Q. Liu, Yufei Chen, Mengqi Ye, Anja Rosenbusch, Kun Xu, Yuchun Wang, Alain Duboust, Sherry Xia, Wen-Chiang Tu, Lakshmanan Karuppiah
Publikováno v:
ECS Transactions. 19:73-79
Since the CMP process depends on chemical and mechanical effects, the interaction with the physical and chemical properties of the GST alloy play very important roles during the CMP process. In this paper, the impact of the CMP process on a soft GST
Autor:
Gabriele Harder, T. Don Tilley, Markus Haufe, Laurel L. Schafer, Shane S. H. Mao, Jonathan R. Nitschke, Feng-Q. Liu
Publikováno v:
Chemistry - A European Journal. 8:74-83
A series of silyl-terminated diynes of varying lengths and substitution patterns have been prepared. These diynes undergo zirconocene coupling with selective formation of trimeric macrocycles from linear alkynes, while nonlinear diynes give cyclodime
Autor:
T. Don Tilley, Gabriele Harder, Feng-Q. Liu, Jonathan R. Nitschke, Markus Haufe, Laurel L. Schafer, Shane S. H. Mao
Publikováno v:
ChemInform. 33
A series of silyl-terminated diynes of varying lengths and substitution patterns have been prepared. These diynes undergo zirconocene coupling with selective formation of trimeric macrocycles from linear alkynes, while nonlinear diynes give cyclodime
Publikováno v:
MRS Proceedings. 991
Planarization efficiency is a key parameter to evaluate the process effectiveness of CMP. When the Cu thickness was removed beyond the step height, under certain conditions, the recessed trenches become protruded, resulting in reverse topography. Thi
Autor:
Feng Q. Liu, Stan D. Tsai, W. Lu, Liang-Yuh Chen, M. Naujok, Antoine P. Manens, J. Salfelder, X. Sakamoto, X. Wang, R. Knarr, Alain Duboust, Y. Moon, L. Economikos, P. Ong, S. Shrauti, Siew Neo, W. Swart
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
A novel copper (Cu) planarization process, Ecmp, integrating electro-chemical mechanical polishing capability on a 300mm CMP platform with low down force conventional polishing processes is being developed and evaluated on low-k CVD devices. In the i
Autor:
Laurel L, Schafer, Jonathan R, Nitschke, Shane S H, Mao, Feng-Q, Liu, Gabriele, Harder, Markus, Haufe, T Don, Tilley
Publikováno v:
Chemistry (Weinheim an der Bergstrasse, Germany). 8(1)
A series of silyl-terminated diynes of varying lengths and substitution patterns have been prepared. These diynes undergo zirconocene coupling with selective formation of trimeric macrocycles from linear alkynes, while nonlinear diynes give cyclodime
Publikováno v:
Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
Traditional slurry copper (Cu) CMP processes have disadvantages in terms of dishing, erosion, Cu and oxide losses, micro-scratches and cost due in part to the presence of abrasive particles during polishing. A stable abrasive-free (AF) Cu CMP process
Autor:
Feng Q Liu, Chenhao Ge, Kun Xu, Mengqi Ye, Yuchun Wang, Yufei Chen, Sherry Xia, Alain Duboust, Wen-Chiang Tu, Lakshmanan Karuppiah
Publikováno v:
ECS Meeting Abstracts. :741-741
not Available.
Publikováno v:
Journal of The Electrochemical Society. 153:C377
The electrochemical mechanical planarization (Ecmp) process is a revolutionary planarization technology uniquely combining removal rate controlled by charge with superior planarization efficiency in the near no-shear regime. A planarization mechanism