Výsledky vyhledávání - "Feng Gao-Ming"

A 130nm 1Mb Embedded Phase Change Memory with 500kb/s Single Channel Write Throughput

Autor: Chen Yifeng, Ding Sheng, Chen Xiao-Gang, Zhong Ming, Feng Gao-Ming, Xie Zhifeng, Wang Qian, Cai Daolin, Chen Houpeng, Song Zhi-Tang, Xu Chen, WU Guanpin

Publikováno v: Procedia Engineering. 16:198-203

A 130 nm 1Mb embedded phase change memory (PCM) has been achieved, requiring only three additional masks for phase change storage element, featuring 500 kb/s single channel write throughput and > 10 8 endurance. The prepare process has been optimized

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93db86591d6eabc2ee332fdd0c5fadb8

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RESET Current Reduction for Phase Change Memory Based on Standard 0.13-μm CMOS Technology

Autor: Feng Gao-Ming, Zhong Min, WU Guangping, Chen Xiao-Gang, Wang Liang-Yong, Yang Zuo-Ya, Chen Bomy, Chen Yifeng, Liu Bo, Xie Zhifeng, Wan Xu-Dong, Song Zhi-Tang, Xu Chen

Publikováno v: Procedia Engineering. 16:401-406

In order to reduce the RESET current of phase change memory (PCM), which is fabricated using standard 0.13-μm CMOS technology, we have investigated various process factors that might affect the phase transition process, including doping concentratio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4690a6ab8b156d63db9e3a809c839d57
https://doi.org/10.1016/j.proeng.2011.08.1102

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Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory

Autor: Feng Gao-Ming, Feng Song-Lin, Song Zhi-Tang, Liu Bo, Wan Xu-Dong

Publikováno v: Web of Science

In order to improve the reliability of C-RAM devices, a seamless sub-micro W heating electrode in diameter 260 nm is fabricated with standard 0.18 μm CMOS processing line. Then we successfully manufacture a chalcogenide random access memory device u

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de1c47edb26173dbd45cb7575b3b0f91
https://doi.org/10.1088/0256-307x/25/6/100

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Ge 1 Sb 2 Te 4 Based Chalcogenide Random Access Memory Array Fabricated by 0.18-μm CMOS Technology

Autor: Feng Song-Lin, Feng Gao-Ming, Chen Bomy, Zhang Ting, WU Liang-Cai, Song Zhi-Tang, Liu Bo

Publikováno v: Chinese Physics Letters. 24:790-792

Ge1Sb2Te4-based chalcogenide random access memory array, with a tungsten heating electrode of 260 nm in diameter, is fabricated by 0.18-μm CMOS technology. Electrical performance of the device, as well as physical and electrical properties of Ge1Sb2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::05b4b11d1bd339557a365ec83db6d9de
https://doi.org/10.1088/0256-307x/24/3/056

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Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode

Autor: Liu Qi-Bin, WU Liang-Cai, Liu Bo, Song Zhi-Tang, Feng Gao-Ming, Chen Bomy, Feng Song-Lin

Publikováno v: Chinese Physics Letters. 24:262-264

In order to reduce the reset current of chalcogenide random access memory, a W sub-microtube heater electrode with outer/inner diameter of 260/100 nm, which was fabricated with standard 0.18-μm technology, is proposed for the first time to achieve a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e53f51950161f67e8c44906190ed21f1
https://doi.org/10.1088/0256-307x/24/1/071

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Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Autor: Feng Gao-Ming, Chen Bomy, Liu Bo, Feng Song-Lin, Song Zhi-Tang, WU Liang-Cai

Publikováno v: Chinese Physics Letters. 23:2557-2559

Phase change memory (PCM) cell array is fabricated by a standard complementary metal–oxide–semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50 nm deposited by rf magnetron sputteri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf24c64d8bfe26e7699106e7b53696b0
https://doi.org/10.1088/0256-307x/23/9/057

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Thermal effect of Ge 2 Sb 2 Te 5 in phase change memory device

Autor: Ren Kun, Ren Wan-Chun, Xu Jia, Li Juntao, Song Zhi-Tang, Tong Hao, Liu Bo, Ren Jia-Dong, Zhu Min, Feng Gao-Ming

Publikováno v: Chinese Physics B. 23:087804

In the fabrication of phase change random access memory (PRAM) devices, high temperature thermal processes are inevitable. We investigate the thermal stability of Ge2Sb2Te5 (GST) which is a prototypical phase change material. After high temperature p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c45cd3339bc24cad8e74424948620e79
https://doi.org/10.1088/1674-1056/23/8/087804

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Akademický článek

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