Silizium- und SiC-Leistungsdioden unter besonderer Berücksichtigung von elektrisch-thermischen Kopplungseffekten und nichtlinearer Dynamik

Autor: Felsl, Hans Peter.

Techn. Univ., Diss., 2009--Chemnitz.

Externí odkaz: http://d-nb.info/100155485X/34
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200902077
http://archiv.tu-chemnitz.de/pub/2009/0207

Investigation of deep levels in SiC-Schottky diodes with frequency resolved admittance spectroscopy.

Autor: Pertermann, Eric, Lutz, Josef, Sharma, R. K., Hazdra, P., Popelka, S., Felsl, Hans Peter, Niedernostheide, Franz-Josef, Schulze, Hans-Joachim

Publikováno v: 2015 IEEE MTT-S 2015 International Microwave Workshop Series on RF & Wireless Technologies for Biomedical & Healthcare Applications (IMWS-BIO); 2015, p1-7, 7p

Comparison of critical current filaments in IGBT short circuit and during diode turn-off.

Autor: Baburske, Roman, van Treek, Vera, Pfirsch, Frank, Niedernostheide, Franz-Josef, Jaeger, Christian, Schulze, Hans-Joachim, Felsl, Hans Peter

Publikováno v: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2014, p47-50, 4p

Measurements and simulations of the turn-off behaviour of diodes with deep energy levels of Se implanted in Si.

Autor: Pertermann, Eric, Lutz, Josef, Arnold, Markus, Zahn, Dietrich R. T., Schulze, Hans-Joachim, Felsl, Hans Peter, Niedernostheide, Franz-Josef

Publikováno v: 2013 15th European Conference on Power Electronics & Applications (EPE); 2013, p1-6, 6p

The nn⁺-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes.

Autor: Lutz, Josef, Baburske, Roman, Min Chen, Heinze, Birk, Domeij, Martin, Felsl, Hans-Peter, Schulze, Hans-Joachim

Publikováno v: IEEE Transactions on Electron Devices; Nov2009, Vol. 56 Issue 11, p2825-2832, 8p, 2 Diagrams, 9 Graphs