Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Felix Winkler"'
Autor:
Viktoria Knöbl, Lukas Maier, Stefan Grasl, Carmen Kratzer, Felix Winkler, Vanessa Eder, Hubert Hayden, Maria Amparo Sahagun Cortez, Monika Sachet, Rudolf Oehler, Sophie Frantal, Christian Fesl, Karin Zehetner, Georg Pfeiler, Rupert Bartsch, Florian Fitzal, Christian F. Singer, Martin Filipits, Michael Gnant, Christine Brostjan
Publikováno v:
Journal of Translational Medicine, Vol 22, Iss 1, Pp 1-15 (2024)
Abstract Background Monocytes comprise subsets of classical, intermediate and non-classical monocytes with distinct anti- or pro-tumor effects in breast cancer (BC). They are modulated by estrogen, and can contribute to BC control by endocrine therap
Externí odkaz:
https://doaj.org/article/67d59ab9099a49d8987574d7fbdf4ebb
Autor:
Zaid Al-Husseini, Ronny Henker, Laszlo Szilagyi, Niels Neumann, Johann W. Bartha, Dirk Plettemeier, Sujay Charania, Felix Winkler, Frank Ellinger, Sebastian Killge
Publikováno v:
Journal of Lightwave Technology. 38:3454-3460
While conventional silicon photonic (SiP) waveguides achieve high data rates with low loss, they can only be placed on top of the chip surfaces horizontally. In this article, we present a design approach for multimode chip-to-chip interconnects with
Autor:
Matthias Albert, Ye Yu, Andreas Fery, Robert Kirchner, Felix Winkler, Johanna Reif, Daniel Schletz
Publikováno v:
ACS applied materialsinterfaces. 12(50)
Localized surface plasmon resonances (LSPRs) have been widely explored in various research fields because of their excellent ability to condense light into a nanometer scale volume. However, it suffers quite often from the broadening of the LSPR line
Autor:
C. Strobel, Volker Neumann, Ulrich Künzelmann, André Hiess, Dimitrios Kazazis, Robert Kirchner, Johann W. Bartha, Felix Winkler, Sandra Völkel
Publikováno v:
Small
This work describes the fabrication of anisotropically etched, faceted pyramidal structures in amorphous layers of silicon dioxide or glass. Anisotropic and crystal-oriented etching of silicon is well known. Anisotropic etching behavior in completely
Autor:
Claudia Richter, Milan Pešić, Felix Winkler, Johann W. Bartha, Michael J. Hoffmann, Thomas Mikolajick
Publikováno v:
DRC
So far, only CMOS compatible and scalable hafnia-zirconia (HZO) based ferroelectric (FE) n-FeFETs have been reported. To enable the full ferroelectric hierarchy [1] both p- and n-type devices should be available. Here we report a p-FeFET with a large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74d79890bd4552a57a72cbc1d70cdee7
https://tud.qucosa.de/id/qucosa:77564
https://tud.qucosa.de/id/qucosa:77564
Publikováno v:
Thin Solid Films. 627:94-105
In this work, the precursor tert -butylimido-tris-ethylmethylamido-tantalum (TBTEMT) was applied for the atomic layer deposition (ALD) of tantalum oxide (Ta 2 O 5 ) thin films for the first time. Water was used as the second reactant. A self-limiting
Publikováno v:
physica status solidi (a). 218:2000511
Autor:
Johann W. Bartha, Matthias Albert, Felix Winkler, Johanna Reif, Sebastian Killge, Martin Knaut
Publikováno v:
Journal of Vacuum Science & Technology A. 38:012405
Plasma-enhanced atomic layer deposition (PE-ALD) of cobalt (Co) using cyclopentadienylcobalt dicarbonyl [CpCo(CO)2] combined with hydrogen, nitrogen, ammonia, and argon based plasma gases was investigated. The utilized ALD tool was clustered to an ul
Publikováno v:
DDECS
In a time when technology achievement in electronics proceeds fast and the subcircuits size on system on chips (SoC) are decreasing, a mixed-signal simulator is indispensable for the development of integrated circuits (IC). The PRAISE (Piecewise Rapi
Autor:
Felix Winkler, S. Völkel, Johann W. Bartha, Karola Richter, B. Leszczynska, Johanna Reif, C. Strobel, Matthias Albert, Sebastian Killge, André Hiess, Ch. Wenger, Martin Knaut, S. Leszczynski, Carlos Alvarado Chavarin
Publikováno v:
Journal of Applied Physics. 125:234501
A novel transistor with a graphene base embedded between two n-type silicon emitter and collector layers (graphene-base heterojunction transistor) is fabricated and characterized electrically. The base voltage controlled current of the device flows v