Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Felix Kipke"'
Autor:
Tim Böckendorf, Jan Kirschbaum, Felix Kipke, Dominique Bougeard, John Lundsgaard Hansen, Arne Nylandsted Larsen, Matthias Posselt, Hartmut Bracht
Publikováno v:
AIP Advances, Vol 14, Iss 6, Pp 065129-065129-8 (2024)
Self-diffusion in amorphous germanium is studied at temperatures between 325 and 370 °C utilizing amorphous isotopically controlled germanium multilayer structures. The isotope multilayer is epitaxially grown on a single crystalline germanium-on-ins
Externí odkaz:
https://doaj.org/article/f4eea55ba3194e96bc0261ac9624a586
Autor:
Jan K. Prüßing, Tim Böckendorf, Felix Kipke, Jiushuai Xu, Prabowo Puranto, John Lundsgaard Hansen, Dominique Bougeard, Erwin Peiner, Hartmut Bracht
Publikováno v:
Prüßing, J K, Böckendorf, T, Kipke, F, Xu, J, Puranto, P, Lundsgaard Hansen, J, Bougeard, D, Peiner, E & Bracht, H 2022, ' Retarded boron and phosphorus diffusion in silicon nanopillars due to stress induced vacancy injection ', Journal of Applied Physics, vol. 131, no. 7, 075702 . https://doi.org/10.1063/5.0078006
Phosphorus and boron diffusion in silicon at temperatures between 900 and 1050 °C was studied both in bulk and nanostructured samples by means of scanning spreading resistance microscopy. The dopant diffusion from highly doped silicon substrates int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed294c6d5bf89f10c9ed87c8c3a71412
https://doi.org/10.1063/5.0078006
https://doi.org/10.1063/5.0078006
Publikováno v:
Journal of Applied Physics. 127:025703
Diffusion of boron (B) in germanium (Ge) at temperatures ranging between 800 degrees C and 900 degrees C is revisited following the most recent results reported by Uppal et al. [J. Appl. Phys. 96, 1376 (2004)] that have been obtained mainly with impl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb85f1dafcee1cf52791f2a38629027b
https://doi.org/10.1063/1.5134537
https://doi.org/10.1063/1.5134537