Buffer layer free graphene on SiC(0001) via interface oxidation in water vapor

Autor: Roland J. Koch, Felix Fromm, Karsten Horn, Thomas Seyller, Peter Wehrfritz, Hendrik Vita, Florian Speck, Markus Ostler, Stefan Böttcher

Publikováno v: Carbon

Intercalation of various elements has become a popular technique to decouple the buffer layer of epitaxial graphene on SiC(0 0 0 1) from the substrate. Among many other elements, oxygen can be used to passivate the SiC interface, causing the buffer l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6dfefa110e493c50375ce5ba4806a56b
https://doi.org/10.1016/j.carbon.2014.01.004

Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures

Autor: Heiko B. Weber, Michel Bockstedte, Michael Krieger, Martin Hundhausen, Gerhard Pensl, Hiroyuki Nagasawa, Martin Hauck, Felix Fromm, Svetlana Beljakowa

Publikováno v: Materials Science Forum. :265-268

Persistent conductivity in n-type 3C-SiC is investigated in a wide temperature range down to 3 K by Hall effect, admittance spectroscopy, low temperature photoluminescence (LTPL) and Raman spectroscopy. We propose a model, which clearly explains the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5aef41c5e02686db0e1075bc930aa8a4
https://doi.org/10.4028/www.scientific.net/msf.778-780.265

Formation of high-quality quasi-free-standing bilayer graphene on SiC(0 0 0 1) by oxygen intercalation upon annealing in air

Autor: Manfred Ramsteiner, Thomas Seyller, M. H. Oliveira, Joao Marcelo J. Lopes, Felix Fromm, Roland J. Koch, Henning Riechert, Markus Ostler, Timo Schumann

Publikováno v: Carbon. 52:83-89

We report on the conversion of epitaxial monolayer graphene on SiC(0 0 0 1) into decoupled bilayer graphene by performing an annealing step in air. We prove by Raman scattering and photoemission experiments that it has structural and electronic prope

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a170567f26d8a657532e9d8a8ed572a
https://doi.org/10.1016/j.carbon.2012.09.008

Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene

Autor: Samir Mammadov, Christian Raidel, Michele Zacchigna, Felix Fromm, Thomas Seyller, Cephise Cacho, Philip Hofmann, Emma Springate, Federico Cilento, Marco Grioni, Jens Christian Johannsen, Phil D. C. King, Søren Ulstrup, Fulvio Parmigiani, Richard T. Chapman, Jill A. Miwa, Alberto Crepaldi

Publikováno v: Ulstrup, S, Johannsen, J C, Cilento, F, Miwa, J A, Crepaldi, A, Zacchigna, M, Cacho, C, Chapman, R, Springate, E, Mammadov, S, Fromm, F, Raidel, C, Seyller, T, Parmigiani, F, Grioni, M, King, P D C & Hofmann, P 2014, ' Ultrafast dynamics of massive dirac fermions in bilayer graphene ', Physical Review Letters, vol. 112, no. 25, pp. 257401 .
PHYSICAL REVIEW LETTERS
Physical review letters
112 (2014). doi:10.1103/PhysRevLett.112.257401
info:cnr-pdr/source/autori:Ulstrup, Soren; Johannsen, Jens Christian; Cilento, Federico; Miwa, Jill A.; Crepaldi, Alberto; Zacchigna, Michele; Cacho, Cephise; Chapman, Richard; Springate, Emma; Mammadov, Samir; Fromm, Felix; Raidel, Christian; Seyller, Thomas; Parmigiani, Fulvio; Grioni, Marco; King, Phil D. C.; Hofmann, Philip/titolo:Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene/doi:10.1103%2FPhysRevLett.112.257401/rivista:Physical review letters (Print)/anno:2014/pagina_da:/pagina_a:/intervallo_pagine:/volume:112

Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and transport beh

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cd1dc92b839461f87228692fbbe0b91
http://hdl.handle.net/11368/2825325

Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation

Autor: Felix Fromm, Florian Speck, Markus Ostler, Thomas Seyller, Hendrik Vita, Martin Hundhausen, Roland J. Koch, Karsten Horn

Publikováno v: Materials Science Forum. :649-652

Epitaxial graphene (EG) grown on SiC(0001) resides on the so-called buffer layer. This carbon rich (6√3×6√3)R30° reconstruction is covalently bound to the topmost silicon atoms of the SiC. Decoupling the graphene buffer layer from the SiC inter

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f7a93c4e32d487561e8a106188d328a
https://doi.org/10.4028/www.scientific.net/msf.717-720.649