Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Felix Erfurth"'
Autor:
Daniel Lincot, Negar Naghavi, Felix Erfurth, Stéphane Collin, Zacharie Jehl Li-Kao, Arnaud Etcheberry, Jean-François Guillemoles, Georg Voorwinden, Jean-Luc Pelouard, I. Gerard
Publikováno v:
Progress in Photovoltaics: Research and Applications. 20:582-587
An innovative approach combining chemical etching and a “lift-off” process, which allows back contact processing after CIGSe deposition, permitted to use Au as a highly reflective back contact in ultrathin CIGSe solar cells. The Au back contact d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::644d7548eb3f0ee30bd3aec61e64da44
https://doi.org/10.1002/pip.2162
https://doi.org/10.1002/pip.2162
Autor:
Isabelle Gérard, Michael Powalla, Negar Naghavi, Nir Dahan, Jean-Jacques Greffet, Zacharie Jehl, Jean-François Guillemoles, Felix Erfurth, Muriel Bouttemy, Georg Voorwinden, Daniel Lincot, Pierre Tran-Van, Arnaud Etcheberry
Publikováno v:
Applied Surface Science. 258:3058-3061
Chemical and optical properties of the interface between a coevaporated Cu(In,Ga)Se 2 (CIGSe) absorber thin film and the Mo back contact are investigated with the objective to reduce markedly the thickness of CIGSe layers from two microns down to abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e4c60f33aa53cf0b2b527153fbac231
https://doi.org/10.1016/j.apsusc.2011.11.037
https://doi.org/10.1016/j.apsusc.2011.11.037
Autor:
Jean-Luc Pelouard, Arnaud Etcheberry, Bernhard Dimmler, Frédérique Donsanti, Muriel Bouttemy, Boris Morel, Arouna Darga, Negar Naghavi, I. Gerard, Stéphane Collin, Zakaria Djebbour, Pierre Tran-Van, Georg Voorwinden, Michael Powalla, Daniel Lincot, Jean-Jacques Greffet, Zacharie Jehl, Nir Dahan, Nicolas Péré-Laperne, Clément Colin, Denis Mencaraglia, Jean-François Guillemoles, Felix Erfurth
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
Within the UltraCIS project we have started to explore the possibility of reducing down the thickness of the Cu(In, Ga)Se 2 (CIGSe) layer to the sub-micron level (0.1μm) while maintaining a high efficiency level of solar cells. The three main approa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62ab61e153ddfd0403708bd4b6988992
https://doi.org/10.1109/pvsc.2011.6185938
https://doi.org/10.1109/pvsc.2011.6185938