Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Felix Cosmin Mocanu"'
Autor:
Walter Schirmacher, Matteo Paoluzzi, Felix Cosmin Mocanu, Dmytro Khomenko, Grzegorz Szamel, Francesco Zamponi, Giancarlo Ruocco
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-16 (2024)
Abstract The frequency scaling exponent of low-frequency excitations in microscopically small glasses, which do not allow for the existence of waves (phonons), has been in the focus of the recent literature. The density of states g(ω) of these modes
Externí odkaz:
https://doaj.org/article/775c572d19c44e19b4ee048d760e2a00
Autor:
Bo Hou, Felix Cosmin Mocanu, Yuljae Cho, Jongchul Lim, Jiangtao Feng, Jingchao Zhang, John Hong, Sangyeon Pak, Jong Bae Park, Young-Woo Lee, Juwon Lee, Byung-Sung Kim, Stephen M. Morris, Jung Inn Sohn, SeungNam Cha, Jong Min Kim
Colloidal nanocrystals (NCs) have shown remarkable promise for optoelectronics, energy harvesting, photonics, and biomedical imaging. In addition to optimizing quantum confinement, the current challenge is to obtain a better understanding of the crit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ea16a6f174de616804aab47b0b47f66
https://ora.ox.ac.uk/objects/uuid:f95676aa-54e0-4c1e-b706-aaee586875be
https://ora.ox.ac.uk/objects/uuid:f95676aa-54e0-4c1e-b706-aaee586875be
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
Understanding the relation between the time-dependent resistance drift in the amorphous state of phase-change materials and the localised states in the band gap of the glass is crucial for the development of memory devices with increased storage dens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1356931ff7caf2893bdc8ed6b7f0e63
http://link.springer.com/article/10.1038/s41467-019-10980-w
http://link.springer.com/article/10.1038/s41467-019-10980-w
Publikováno v:
Journal of Physics D: Applied Physics. 53:244002
Phase-change memory materials are promising candidates for beyond-silicon, next-generation non-volatile-memory and neuromorphic-computing devices; the canonical such material is the chalcogenide semiconductor alloy Ge2Sb2Te5. Here, we describe the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f56ca435159dadea543940344bb1ff3
https://doi.org/10.1088/1361-6463/ab77de
https://doi.org/10.1088/1361-6463/ab77de