Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Felix, Nippert"'
Autor:
Maximilian Ries, Felix Nippert, Benjamin März, Manuel Alonso-Orts, Tim Grieb, Rudolfo Hötzel, Pascal Hille, Pouria Emtenani, Eser Metin Akinoglu, Eugen Speiser, Julian Plaickner, Jörg Schörmann, Matthias Auf der Maur, Knut Müller-Caspary, Andreas Rosenauer, Norbert Esser, Martin Eickhoff, Markus R. Wagner
The luminescence of InxGa1−xN nanowires (NWs) is frequently reported with large red-shifts as compared to the theoretical value expected from the average In content. Both compositional fluctuations and radial built-in fields were considered account
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aaa9ad6e4d7fe2a17859884b5f10696d
Autor:
Manuel Alonso-Orts, Rudolfo Hötzel, Tim Grieb, Matthias Auf der Maur, Maximilian Ries, Felix Nippert, Benjamin März, Knut Müller-Caspary, Markus R. Wagner, Andreas Rosenauer, Martin Eickhoff
Publikováno v:
Discover Nano. 18
The influence of self-assembled short-period superlattices (SPSLs) on the structural and optical properties of InGaN/GaN nanowires (NWs) grown by PAMBE on Si (111) was investigated by STEM, EDXS, µ-PL analysis and k·p simulations. STEM analysis on
Autor:
Laura E. Ratcliff, Takayoshi Oshima, Felix Nippert, Benjamin M. Janzen, Elias Kluth, Rüdiger Goldhahn, Martin Feneberg, Piero Mazzolini, Oliver Bierwagen, Charlotte Wouters, Musbah Nofal, Martin Albrecht, Jack E. N. Swallow, Leanne A. H. Jones, Pardeep K. Thakur, Tien‐Lin Lee, Curran Kalha, Christoph Schlueter, Tim D. Veal, Joel B. Varley, Markus R. Wagner, Anna Regoutz
Publikováno v:
Advanced materials 34(37), 2204217 (2022). doi:10.1002/adma.202204217
Advanced materials 34(37), 2204217 (2022). doi:10.1002/adma.202204217
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a87a2bd887303dc342a2f7671d87550a
Autor:
Laura E, Ratcliff, Takayoshi, Oshima, Felix, Nippert, Benjamin M, Janzen, Elias, Kluth, Rüdiger, Goldhahn, Martin, Feneberg, Piero, Mazzolini, Oliver, Bierwagen, Charlotte, Wouters, Musbah, Nofal, Martin, Albrecht, Jack E N, Swallow, Leanne A H, Jones, Pardeep K, Thakur, Tien-Lin, Lee, Curran, Kalha, Christoph, Schlueter, Tim D, Veal, Joel B, Varley, Markus R, Wagner, Anna, Regoutz
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(37)
Ga
Autor:
Tim Kolbe, Filip Hjort, Markus R. Wagner, Arne Knauer, Ines Häusler, Munise Cobet, Felix Nippert, Johan S. Gustavsson, Johannes Enslin, Michael Kneissl, Åsa Haglund, Tim Wernicke, Michael Alexander Bergmann
Publikováno v:
ACS Photonics
Ultraviolet light is essential for disinfection, fluorescence excitation, curing, and medical treatment. An ultraviolet light source with the small footprint and excellent optical characteristics of vertical-cavity surface-emitting lasers (VCSELs) ma
Autor:
Michael Kneissl, Giulia Cardinali, Nando Prokop, Tim Kolbe, Markus R. Wagner, Åsa Haglund, Johannes Enslin, Felix Nippert, Tim Wernicke, Michael Alexander Bergmann, Filip Hjort, Joachim Ciers, Munise Cobet, Johan S. Gustavsson
Publikováno v:
Gallium Nitride Materials and Devices XVI.
We will give an overview of the progress in ultraviolet-emitting vertical-cavity surface-emitting lasers (VCSELs) and their potential applications in areas such as disinfection and medical therapy. This includes our demonstration of the shortest wave
Autor:
S. Schlichting, Alois Krost, Friedhelm Bechstedt, Armin Dadgar, Felix Nippert, Thomas Kure, M. P. Hoffmann, Markus R. Wagner, Gordon Callsen, S. Fritze, Nadja Jankowski, Axel Hoffmann, Christian Nenstiel
Publikováno v:
Communications Physics, Vol 1, Iss 1, Pp 1-7 (2018)
Excitons in semiconductors and insulators consist of fermionic subsystems, electrons and holes, whose attractive interaction facilitates bound quasiparticles with quasi-bosonic character. In the presence of a degenerate electron gas, such excitons di
Autor:
Roland Zeisel, Hans-Jürgen Lugauer, Matthew J. Davies, Christian Brandl, Marc Patrick Hoffmann, Alvaro Gomez-Iglesias, Axel Hoffmann, Felix Nippert, Christian Frankerl
Publikováno v:
Applied Physics Letters. 117:102107
We investigate carrier localization in Al-rich AlGaN/AlN quantum well (QW) structures. Low temperature time-resolved photoluminescence (PL) experiments reveal a strong variation of the carrier decay times with detection photon energy, suggesting a st
Autor:
S. Fritze, Hartmut Witte, Armin Dadgar, Jürgen Bläsing, Gordon Callsen, M. Bügler, Axel Hoffmann, Christian Nenstiel, Thomas Kure, Alois Krost, Felix Nippert
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 9:716-721
We present an experimental study about the influence of Si and Ge doping in GaN with focus on the occurring strain levels and overall crystalline quality. Extremely high quality samples were examined by means of Raman spectroscopy, demonstrating effe
Autor:
Roland Zeisel, Rainer Lösing, Hans-Jürgen Lugauer, Axel Hoffmann, Andreas Waag, Felix Nippert, Christian Brandl, Matthew J. Davies, Marc Patrick Hoffmann, Martin Mandl, Nadine Tillner, Christian Frankerl
Publikováno v:
physica status solidi (b). 257:2000278
Herein, the optical properties of aluminum nitride (AlN) epitaxial layers grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) are reported. The structures investigated in this study are grown at highly different degrees of