Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Felicia McGuire"'
Autor:
Yuh-Chen Lin, Felicia McGuire, Steven Noyce, Nicholas Williams, Zhihui Cheng, Joseph Andrews, Aaron D. Franklin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 645-649 (2019)
Negative capacitance (NC) field-effect transistors (FETs) with 2-D semiconducting channels have become increasingly attractive due to their ability to produce sub-60 mV/dec switching behavior in a physically scalable device. However, it has yet to be
Externí odkaz:
https://doaj.org/article/d7bd510c92ab4f3b92d5cf9d76e7fe5c
Autor:
Steven Noyce, Joseph B. Andrews, Felicia McGuire, Yuh-Chen Lin, Aaron D. Franklin, Nicholas X. Williams, Zhihui Cheng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 645-649 (2019)
Negative capacitance (NC) field-effect transistors (FETs) with 2-D semiconducting channels have become increasingly attractive due to their ability to produce sub-60 mV/dec switching behavior in a physically scalable device. However, it has yet to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c9c9e1981242957a12a189e502a8efe
https://doi.org/10.1109/jeds.2019.2922441
https://doi.org/10.1109/jeds.2019.2922441
Autor:
Katherine Price, Felicia McGuire, Sayeef Salahuddin, Aaron D. Franklin, G. Bruce Rayner, Yuh-Chen Lin, Sourabh Khandelwal
Publikováno v:
Nano Letters. 17:4801-4806
It has been shown that a ferroelectric material integrated into the gate stack of a transistor can create an effective negative capacitance (NC) that allows the device to overcome “Boltzmann tyranny”. While this switching below the thermal limit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7da885f571e419d6101153d0c1f5859b
https://doi.org/10.1021/acs.nanolett.7b01584
https://doi.org/10.1021/acs.nanolett.7b01584
Publikováno v:
ACS Applied Materials & Interfaces. 9:23072-23080
Regardless of the application, MoS2 requires encapsulation or passivation with a high-quality dielectric, whether as an integral aspect of the device (as with top-gated field-effect transistors (FETs)) or for protection from ambient conditions. Howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41e348af20535a2c6393f50fddf417c0
https://doi.org/10.1021/acsami.7b00538
https://doi.org/10.1021/acsami.7b00538
Publikováno v:
IEEE Electron Device Letters. 37:1234-1237
Charge transport at the contacts is a dominant factor in determining the performance of devices using 2D MoS2. Using a low-energy beam of Ar ions, the interface between Ni and MoS2 was modified to improve the performance in 2D field-effect transistor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4deeca385e1b382585313f25e5b856ae
https://doi.org/10.1109/led.2016.2591552
https://doi.org/10.1109/led.2016.2591552
Publikováno v:
2017 75th Annual Device Research Conference (DRC).
The attractiveness of negative capacitance field-effect transistors (NC-FETs) stems from their ability to enable a subthreshold swing (SS) below the 60 mV/decade thermal limit at room temperature — a direct effect of the step-up voltage amplifier b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a30f2234cf13d914bccbeaf930b3903
https://doi.org/10.1109/drc.2017.7999478
https://doi.org/10.1109/drc.2017.7999478
Autor:
Rohan K. Achar, Joseph B. Andrews, Faris Albarghouthi, Benjamin B. Yellen, Felicia McGuire, Daniel Y. Joh, Rebecca Blair, Darush Mozhdehi, Cassio M. Fontes, Zackary Zimmers, William Oles, Aaron D. Franklin, Jacob Richter, Angus Hucknall, Roozbeh Abedini-Nassab, Ashutosh Chilkoti
Publikováno v:
ACS applied materialsinterfaces. 9(6)
Advances in electronics and life sciences have generated interest in "lab-on-a-chip" systems utilizing complementary metal oxide semiconductor (CMOS) circuitry for low-power, portable, and cost-effective biosensing platforms. Here, we present a simpl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85ad0823413a038cdfdc337a06f4f9ac
https://pubmed.ncbi.nlm.nih.gov/28117566
https://pubmed.ncbi.nlm.nih.gov/28117566
Autor:
David R. Smith, Felicia McGuire, Maiken H. Mikkelsen, Alec Rose, Cristian Ciracì, Thang B. Hoang, Jack J. Mock
Publikováno v:
Nano Letters. 14:4797-4802
The radiative processes associated with fluorophores and other radiating systems can be profoundly modified by their interaction with nanoplasmonic structures. Extreme electromagnetic environments can be created in plasmonic nanostructures or nanocav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c1f48ac377afe291358983fb562cf18
https://doi.org/10.1021/nl501976f
https://doi.org/10.1021/nl501976f
Autor:
Benjamin J. Wiley, J. Britt Lassiter, Ashutosh Chilkoti, Felicia McGuire, Cristian Ciracì, Ryan T. Hill, David R. Smith, Jack J. Mock
Publikováno v:
Nano Letters. 13:5866-5872
A metallic nanoparticle positioned over a metal film offers great advantages as a highly controllable system relevant for probing field-enhancement and other plasmonic effects. Because the size and shape of the gap between the nanoparticle and film c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::716e550603e69399bfaf417a3d23dcc7
https://doi.org/10.1021/nl402660s
https://doi.org/10.1021/nl402660s
Publikováno v:
2016 74th Annual Device Research Conference (DRC).
Contact resistance is a dominant factor in the performance of field-effect transistors (FETs) from two-dimensional MoS 2 . Several techniques have been shown to improve carrier transport at the metal-MoS 2 interface, thus lowering the contact resista
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10a729c21e6fe1d54fc29aba5d76dbb5
https://doi.org/10.1109/drc.2016.7548484
https://doi.org/10.1109/drc.2016.7548484