Zobrazeno 1 - 10
of 218
pro vyhledávání: '"Feldeffekttransistor"'
Autor:
Suresh, Bharathwaj, Bertele, Martin, Breyer, Evelyn T., Klein, Philipp, Mulaosmanovic, Halid, Mikolajick, Thomas, Slesazeck, Stefan, Chicca, Elisabetta
Inspired by neurobiological systems, Spiking Neural Networks (SNNs) are gaining an increasing interest in the field of bio-inspired machine learning. Neurons, as central processing and short-term memory units of biological neural systems, are thus at
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A77196
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https://tud.qucosa.de/api/qucosa%3A77196/attachment/ATT-0/
Autor:
Rai, Shubham, Trommer, Jens, Raitza, Michael, Mikolajick, Thomas, Weber, Walter M., Kumar, Akash
An early evaluation in terms of circuit design is essential in order to assess the feasibility and practicability aspects for emerging nanotechnologies. Reconfigurable nanotechnologies, such as silicon or germanium nanowire-based reconfigurable field
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https://tud.qucosa.de/id/qucosa%3A76812
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https://tud.qucosa.de/api/qucosa%3A76812/attachment/ATT-0/
Hafnium oxide (HfO₂)-based ferroelectric field-effect transistor (FeFET) is an attractive device for nonvolatile memory. However, when compared to the well-established flash devices, the memory window (MW) of FeFETs reported so far is rather limite
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A76794
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https://tud.qucosa.de/api/qucosa%3A76794/attachment/ATT-0/
This letter investigates the impact of self-heating on the post-cycling functionality of a scaled hafnium oxide-based ferroelectric field-effect transistor (FeFET). The full recovery of FeFET switching properties and data retention after the cycling
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https://tud.qucosa.de/id/qucosa%3A76775
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https://tud.qucosa.de/api/qucosa%3A76775/attachment/ATT-0/
The electric-field-driven and reversible polarization switching in ferroelectric materials provides a promising approach for nonvolatile information storage. With the advent of ferroelectricity in hafnium oxide, it has become possible to fabricate ul
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https://tud.qucosa.de/id/qucosa%3A80577
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https://tud.qucosa.de/api/qucosa%3A80577/attachment/ATT-0/
Autor:
Oing, Dennis
Silizium ist das derzeit bedeutendste Halbleitermaterial und der gr����te Teil der Halbleiterindustrie basiert auf diesem Material. F��r zuk��nftige Anwendungen kann es aber sinnvoll sein, den Anwendungsbereich von Halbleitermateriali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d32ac3a9fcbacd172cb37be98041398
Autor:
Schmidt, Georg C., Höft, Daniel, Haase, Katherina, Hübler, Arved C., Karpov, E., Tkachov, R., Stamm, M., Kiriy, A., Haidu, F., Zahn, D. R. T., Yan, H., Facchetti, A.
Publikováno v:
J. Mater. Chem. C, 2014,2, 5149-5154
The semiconducting properties of a bithiophene-naphthalene diimide copolymer (PNDIT2) prepared by Ni-catalyzed chain-growth polycondensation (P1) and commercially available N2200 synthesized by Pd-catalyzed step-growth polycondensation were compared.
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27:560-572
An early evaluation in terms of circuit design is essential in order to assess the feasibility and practicability aspects for emerging nanotechnologies. Reconfigurable nanotechnologies, such as silicon or germanium nanowire-based reconfigurable field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::455075bc52d24b14f6dd7126ecf74bc9
https://doi.org/10.1109/tvlsi.2018.2884646
https://doi.org/10.1109/tvlsi.2018.2884646
Autor:
Knobloch, Theresia
Over the past decades, the continued scaling of transistors has reduced the energy consumption for every switching event and has increased the computational power of integrated circuits. However, nowadays, state-of-the-art silicon technology is reach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77d89514e893ec1490101cdceb077ee2