Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Fekri, Kharbash"'
Autor:
Aisha Fahad Alraeesi, Hanan Fekri Kharbash, Jawaher Saif Alghfeli, Shamma Sultan Alsaedi, Munkhjargal Gochoo
Publikováno v:
2021 IEEE International Conference on Systems, Man, and Cybernetics (SMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1533cbb084b93424a57ca008530164ac
https://doi.org/10.1109/smc52423.2021.9659292
https://doi.org/10.1109/smc52423.2021.9659292
Publikováno v:
IWCMC
Paralysis is the most inhibiting among all the severe motor disabilities. Indeed, people are inflicted with paralysis as the result of an accident or a medical condition that affects - completely or partially, the way muscles and nerves function. How
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a1d8a77c9c476ed3ff5b0664e52c432
https://doi.org/10.1109/iwcmc51323.2021.9498751
https://doi.org/10.1109/iwcmc51323.2021.9498751
Publikováno v:
The Journal of Engineering. 2018:735-744
This study compares the performance and reliability of classical complementary metal-oxide-semiconductor (CMOS) gates with Schmitt trigger (ST) ones. The ST hysteresis, caused by the added positive feedback transistors, improves the design static noi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c57978b9cb253399896c5fe3fb8a57b
https://doi.org/10.1049/joe.2018.0091
https://doi.org/10.1049/joe.2018.0091
Publikováno v:
Journal of Low Power Electronics. 10:137-148
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e7da61db2c96c3e5a286fe3cea24dd
https://doi.org/10.1166/jolpe.2014.1305
https://doi.org/10.1166/jolpe.2014.1305
Publikováno v:
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO).
This paper compares classical CMOS logic gates with their Schmitt trigger (ST) versions, when sized both conventionally as well as unconventionally. The reason for studying ST logic gates is due to their positive feedback which leads to hysteresis an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::729d01cb4cbcc6b7a249139112096e94
https://doi.org/10.1109/nano.2015.7388698
https://doi.org/10.1109/nano.2015.7388698
Publikováno v:
2014 10th International Conference on Innovations in Information Technology (IIT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6e067a979371a8f08de087ef91d3cd8
https://doi.org/10.1109/innovations.2014.6987566
https://doi.org/10.1109/innovations.2014.6987566
Publikováno v:
2014 International Semiconductor Conference (CAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fac6b25c9b81f28d76b5020a1dd7d3f6
https://doi.org/10.1109/smicnd.2014.6966444
https://doi.org/10.1109/smicnd.2014.6966444
Publikováno v:
ICECS
This paper compares classical CMOS versus Schmitt trigger (ST) inverters (INVs), sized both conventionally as well as unconventionally. The reason is that ST INVs are using positive feedback (which leads to hysteresis) and are expected to exhibit muc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373a49c112744033b6ebb02452621337
https://doi.org/10.1109/icecs.2013.6815337
https://doi.org/10.1109/icecs.2013.6815337
Publikováno v:
ICECS
This paper uses body bias for improving on a transistor sizing method for CMOS gates, which relies on upsizing the length (L) and balancing the voltage transfer characteristics for maximizing the static noise margins (SNM's). The method leads to high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4d4760969b690f25b41cedaf551ca1e
https://doi.org/10.1109/icecs.2013.6815441
https://doi.org/10.1109/icecs.2013.6815441
Publikováno v:
CAS 2013 (International Semiconductor Conference).
This paper revisits a transistor sizing method for CMOS gates, which relies on upsizing the length (L) and balancing the voltage transfer characteristics for maximizing the static noise margins (SNM's). It leads to highly reliable gates, able to oper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c9c6df7c30de73fa654d4003d40f5c3
https://doi.org/10.1109/smicnd.2013.6688659
https://doi.org/10.1109/smicnd.2013.6688659